发明授权
US06326283B1 Trench-diffusion corner rounding in a shallow-trench (STI) process
有权
沟槽扩散角在浅沟（STI）过程中四舍五入
- 专利标题： Trench-diffusion corner rounding in a shallow-trench (STI) process
- 专利标题（中）： 沟槽扩散角在浅沟（STI）过程中四舍五入
-
申请号： US09519908申请日： 2000-03-07
-
公开(公告)号： US06326283B1公开(公告)日： 2001-12-04
- 发明人: Victor Liang , Olivier Laparra , Mark Rubin
- 申请人： Victor Liang , Olivier Laparra , Mark Rubin
- 主分类号： H01L2176
- IPC分类号： H01L2176
摘要：
An isolation structure on an integrated circuit is formed using a shallow trench isolation process. A layer of buffer oxide is formed on a substrate. A layer of nitride is formed on the layer of buffer oxide. The layer of nitride and the layer of buffer oxide are patterned to form a trench area. An oxidation of the substrate is performed to provide for round corners at a perimeter of the trench area. The substrate is then etched to form a trench within the trench area.
信息查询
