Abstract:
A gait modulation system including: (a) a sensor device including a sensor adapted for associating with at least one lower limb of the patient, the sensor for transducing at least one parameter related to a gait of the patient, so as to obtain gait data related to the gait, and (b) a muscle stimulator including: (i) an electrical stimulation circuit, the circuit adapted to supply an electrical stimulation output to an electrode array for performing functional electrical stimulation of at least one muscle of the lower limb, and (ii) a microprocessor, operatively connected to the at least one sensor, the microprocessor adapted for: receiving a stream of gait information based on the gait data; processing the gait information, and controlling the stimulation output based on the processing of the gait information, and wherein the microprocessor is further adapted to identify a failure in the stream of gait information, and to consequently control the electrical stimulation circuit to deliver a fail-safe stimulation output over a portion of a duration of the failure.
Abstract:
A composition is provided that capitalizes on the biological activity of trichloroacetic acid, but effectively reduces or eliminates TCA induced irritation allowing the composition to be used as a wrinkle effacer or stimulant of skin cell turnover; uses previously thought as commercially impossible with TCA. Also provided are processes of effacing wrinkles or stimulating skin cell turnover including applying the inventive composition to the skin of a subject.
Abstract:
An electro-mechanical transistor includes a source electrode and a drain electrode spaced apart from each other. A source pillar is between the substrate and the source electrode. A drain pillar is between the substrate and the drain electrode. A moveable channel is spaced apart from the source electrode and the drain electrode. A gate nano-pillar is between the moveable channel and the substrate. A first dielectric layer is between the moveable channel and the gate nano-pillar. A second dielectric layer is between the source pillar and the source electrode. A third dielectric layer is between the drain pillar and the drain electrode.
Abstract:
A method for treating colorectal cancer is disclosed and consists of administering to a patient in need of such treatment a pharmaceutically effective dose of an agent capable of blocking the binding of EGF-receptor to its natural ligand(s) and/or inhibiting EGF-receptor-mediated signaling. Also disclosed is a method of increasing a colorectal cancer patient response to anti-cancer therapy which consists of administering to said patient a pharmaceutically effective dose of an agent capable of blocking the binding of EGF-receptor to its natural ligand(s) and/or inhibiting EGF-receptor-mediated signaling.
Abstract:
The present invention relates to the identification and use of gene expression profiles with clinical relevance to prostate cancer. In particular, the invention provides the identity of genes whose expression, at the transcriptional and protein levels, is correlated with prostate cancer progression. Methods and kits are described for using these gene expression profiles in the study and/or diagnosis of prostate cancer diseases, in the prediction of prostate cancer progression, and in the selection and/or monitoring of treatment regimens. The invention also relates to the screening of drugs that target these genes or their protein products, in particular for the development of therapeutics for modulating prostate cancer progression.
Abstract:
A method of utilizing an intellectual property grouping owned by a patent entity to generate income. The method includes acquiring rights in a first intellectual property asset from a seller on behalf of a patent investment entity, providing compensation to the seller in exchange for the first intellectual property asset, granting less than all of the rights in the first intellectual property asset to the seller of the intellectual property asset in exchange for a stream of payments, wherein granting less than all of the rights in the first intellectual property asset creates residual rights in the first intellectual property asset, and utilizing the residual rights in the first intellectual property asset to generate income for the patent investment entity.
Abstract:
A method is presented in which nitrogen-based gas in incorporated in polysilicon gate re-oxidation to improve hot carrier performance. A gate oxide layer is formed. Gate material is deposited on the gate oxide layer. The gate material is etched to form a gate structure. The gate oxide layer and the gate are re-oxidized. During re-oxidation, nitrogen-based gas is introduced to nitridize re-oxidized portions of the gate oxide layer.
Abstract:
An electromechanical transistor includes a source electrode and a drain electrode spaced apart from each other. A source pillar is between the substrate and the source electrode. A drain pillar is between the substrate and the drain electrode. A moveable channel is spaced apart from the source electrode and the drain electrode. A gate nano-pillar is between the moveable channel and the substrate. A first dielectric layer is between the moveable channel and the gate nano-pillar. A second dielectric layer is between the source pillar and the source electrode. A third dielectric layer is between the drain pillar and the drain electrode.
Abstract:
Systems and methods for providing visualizing business functions and/or operations using at least one visual representation of the energy and information systems, in addition to human resource elements, for representing a business and its operating efficiency.
Abstract:
A system that generates a layout for a transistor is presented. During operation, the system receives a transistor library which includes operating characteristics of fabricated transistors correlated to transistor gate shapes. The system also receives one or more desired operating characteristics for the transistor. Next, the system determines a transistor gate shape for the transistor based on the transistor library so that a fabricated transistor with the transistor gate shape substantially achieves the one or more desired operating characteristics. The system then generates the layout for the transistor which includes the transistor gate shape.