发明授权
US06326318B1 Process for producing semiconductor devices including an insulating layer with an impurity
有权
用于制造包括具有杂质的绝缘层的半导体器件的工艺
- 专利标题： Process for producing semiconductor devices including an insulating layer with an impurity
- 专利标题（中）： 用于制造包括具有杂质的绝缘层的半导体器件的工艺
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申请号： US09521865申请日： 2000-03-08
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公开(公告)号： US06326318B1公开(公告)日： 2001-12-04
- 发明人: Hiroyuki Watanabe , Hideki Mizuhara , Kaori Misawa , Masaki Hirase , Hiroyuki Aoe
- 申请人： Hiroyuki Watanabe , Hideki Mizuhara , Kaori Misawa , Masaki Hirase , Hiroyuki Aoe
- 主分类号： H01L2131
- IPC分类号： H01L2131
摘要：
A semiconductor device and a process for producing the same. The device has two conducting layers that are spaced from each other and an organic insulating film for electrically insulating these two conducting layers from each other. The organic insulating film contains contact holes with plugs being embedded therein so as to electrically connect these two conducting layers by the plugs. The process contains a step of forming the organic insulating film on the lower conducting layer. An impurity having a kinetic energy is introduced into the organic insulating film. Next, contact holes are formed in the organic insulating film, and then plugs are formed in the contact holes. An upper conducting layer is formed on the organic insulating film so as to be electrically connected to the plugs.
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