公开(公告)号：US06177343B1

公开(公告)日：2001-01-23

申请号：US09429698

申请日：1999-10-28

申请人： Hiroyuki Watanabe ,  Hideki Mizuhara ,  Kaori Misawa ,  Masaki Hirase ,  Hiroyuki Aoe

发明人： Hiroyuki Watanabe ,  Hideki Mizuhara ,  Kaori Misawa ,  Masaki Hirase ,  Hiroyuki Aoe

IPC分类号： H01L214763

CPC分类号： H01L21/02164 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02321 ,  H01L21/02351 ,  H01L21/3115 ,  H01L21/31155 ,  H01L21/3121 ,  H01L21/316 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76877

摘要： A semiconductor device and a process for producing the same. The device has two conducting layers that are spaced from each other and an insulating film for electrically insulating these two conducting layers from each other. The insulating film contains contact holes with plugs being embedded therein so as to electrically connect these two conducting layers by the plugs. The process contains a step of forming the insulating film on the lower conducting layer. An impurity having a kinetic energy is introduced into the insulating film. Next, contact holes are formed in the insulating film, and then plugs are formed in the contact holes. An upper conducting layer is formed on the insulating film so as to be electrically connected to the plugs.

摘要翻译： 半导体器件及其制造方法。 该器件具有彼此间隔开的两个导电层和用于将这两个导电层彼此电绝缘的绝缘膜。 绝缘膜包含嵌入其中的插塞的接触孔，以便通过插头将这两个导电层电连接。 该方法包括在下导电层上形成绝缘膜的步骤。 具有动能的杂质被引入到绝缘膜中。 接下来，在绝缘膜中形成接触孔，然后在接触孔中形成插塞。 在绝缘膜上形成上导电层以与插头电连接。

公开(公告)号：US20060199371A1

公开(公告)日：2006-09-07

申请号：US11419450

申请日：2006-05-19

申请人： Hideki Mizuhara ,  Yasunori Inoue ,  Hiroyuki Watanabe ,  Masaki Hirase ,  Kaori Misawa ,  Hiroyuki Aoe ,  Kimihide Saito ,  Hiroyasu Ishihara

发明人： Hideki Mizuhara ,  Yasunori Inoue ,  Hiroyuki Watanabe ,  Masaki Hirase ,  Kaori Misawa ,  Hiroyuki Aoe ,  Kimihide Saito ,  Hiroyasu Ishihara

IPC分类号： H01L21/4763

CPC分类号： H01L21/3121 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02321 ,  H01L21/02351 ,  H01L21/31155 ,  H01L21/316 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76825

摘要： A semiconductor device includes a substrate and wirings located on the substrate. A passivation film including a first insulating film containing an impurity is located on the wirings. The first insulating film is formed from silicon oxide film materials containing greater than one percent carbon.

摘要翻译： 半导体器件包括衬底和位于衬底上的布线。 包含含有杂质的第一绝缘膜的钝化膜位于布线上。 第一绝缘膜由含有大于1％碳的氧化硅膜材料形成。

公开(公告)号：US06214749B1

公开(公告)日：2001-04-10

申请号：US08949283

申请日：1997-10-21

申请人： Hiroyuki Watanabe ,  Hideki Mizuhara ,  Kaori Misawa ,  Masaki Hirase ,  Hiroyuki Aoe

发明人： Hiroyuki Watanabe ,  Hideki Mizuhara ,  Kaori Misawa ,  Masaki Hirase ,  Hiroyuki Aoe

IPC分类号： H01L2131

CPC分类号： H01L21/3115 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02321 ,  H01L21/02351 ,  H01L21/3121 ,  H01L21/316 ,  H01L21/31625 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76877

摘要： A semiconductor producing method includes the steps of: forming an SOG pre-film on a semimanufactured semiconductor device by means of spin-on-glass (SOG) process; and forming a modified SOG film by doping the SOG pre-film with at least one impurity ion selected from: inert gas ions; simple ions of Groups IIIb, IVb, Vb, VIb, VIIb, IVa and Va elements; and ions of compounds containing any one of Groups IIIb, IVb, Vb, VIb, VIIb, IVa and Va elements.

摘要翻译： 半导体制造方法包括以下步骤：通过旋涂玻璃（SOG）工艺在半制造的半导体器件上形成SOG预膜; 并通过用选自惰性气体离子的至少一种杂质离子掺杂SOG预膜来形成改性SOG膜; IIIb，IVb，Vb，VIb，VIIb，IVa和Va族元素的简单离子; 和含有IIIb，IVb，Vb，VIb，VIIb，IVa和Va族元素中的任何一种的化合物的离子。

公开(公告)号：US06326318B1

公开(公告)日：2001-12-04

申请号：US09521865

申请日：2000-03-08

申请人： Hiroyuki Watanabe ,  Hideki Mizuhara ,  Kaori Misawa ,  Masaki Hirase ,  Hiroyuki Aoe

发明人： Hiroyuki Watanabe ,  Hideki Mizuhara ,  Kaori Misawa ,  Masaki Hirase ,  Hiroyuki Aoe

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/02282 ,  H01L21/02321 ,  H01L21/02351 ,  H01L21/3115 ,  H01L21/31155 ,  H01L21/3121 ,  H01L21/316 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76877

摘要： A semiconductor device and a process for producing the same. The device has two conducting layers that are spaced from each other and an organic insulating film for electrically insulating these two conducting layers from each other. The organic insulating film contains contact holes with plugs being embedded therein so as to electrically connect these two conducting layers by the plugs. The process contains a step of forming the organic insulating film on the lower conducting layer. An impurity having a kinetic energy is introduced into the organic insulating film. Next, contact holes are formed in the organic insulating film, and then plugs are formed in the contact holes. An upper conducting layer is formed on the organic insulating film so as to be electrically connected to the plugs.

摘要翻译： 半导体器件及其制造方法。 该器件具有彼此间隔开的两个导电层和用于将这两个导电层彼此电绝缘的有机绝缘膜。 有机绝缘膜包含嵌入其中的插塞的接触孔，以便通过插头将这两个导电层电连接。 该方法包括在下导电层上形成有机绝缘膜的步骤。 具有动能的杂质被引入到有机绝缘膜中。 接下来，在有机绝缘膜中形成接触孔，然后在接触孔中形成插塞。 在有机绝缘膜上形成上导电层，以电连接到插头。

公开(公告)号：US06268657B1

公开(公告)日：2001-07-31

申请号：US08877931

申请日：1997-06-18

申请人： Hiroyuki Watanabe ,  Hideki Mizuhara ,  Kaori Misawa ,  Masaki Hirase ,  Hiroyuki Aoe

发明人： Hiroyuki Watanabe ,  Hideki Mizuhara ,  Kaori Misawa ,  Masaki Hirase ,  Hiroyuki Aoe

IPC分类号： H01L21321

CPC分类号： H01L21/02164 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02321 ,  H01L21/02351 ,  H01L21/3115 ,  H01L21/31155 ,  H01L21/3121 ,  H01L21/316 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76877

摘要： A semiconductor device and a process for producing the same. The device has two conducting layers that are spaced from each other and an insulating film for electrically insulating these two conducting layers from each other. The insulating film contains contact holes with plugs being embedded therein so as to electrically connect these two conducting layers by the plugs. The process contains a step of forming the insulating film on the lower conducting layer. An impurity having a kinetic energy is introduced into the insulating film. Next, contact holes are formed in the insulating film, and then plugs are formed in the contact holes. An upper conducting layer is formed on the insulating film so as to be electrically connected to the plugs.

摘要翻译： 半导体器件及其制造方法。 该器件具有彼此间隔开的两个导电层和用于将这两个导电层彼此电绝缘的绝缘膜。 绝缘膜包含嵌入其中的插塞的接触孔，以便通过插头将这两个导电层电连接。 该方法包括在下导电层上形成绝缘膜的步骤。 具有动能的杂质被引入到绝缘膜中。 接下来，在绝缘膜中形成接触孔，然后在接触孔中形成插塞。 在绝缘膜上形成上导电层以与插头电连接。

公开(公告)号：US6150725A

公开(公告)日：2000-11-21

申请号：US030560

申请日：1998-02-25

申请人： Kaori Misawa ,  Hiroyasu Ishihara ,  Hideki Mizuhara

发明人： Kaori Misawa ,  Hiroyasu Ishihara ,  Hideki Mizuhara

IPC分类号： H01L21/60 ,  H01L23/31 ,  H01L23/485 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/05 ,  H01L23/3171 ,  H01L24/03 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05093 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/85201 ,  H01L24/45 ,  H01L24/50 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19043

摘要： An enclosure is formed on a substrate of a semiconductor device surrounding a bonding pad, such that a groove is formed between the enclosure and the bonding pad. An insulating film is formed over the substrate, including the enclosure and the groove. The groove and the film prevent moisture and contaminants from seeping into the semiconductor device.

摘要翻译： 在围绕焊盘的半导体器件的基板上形成外壳，使得在外壳和接合焊盘之间形成凹槽。 绝缘膜形成在基板上，包括外壳和凹槽。 槽和膜防止水分和污染物渗入半导体器件。

公开(公告)号：US20060191894A1

公开(公告)日：2006-08-31

申请号：US11362121

申请日：2006-02-27

申请人： Ryosuke Usui ,  Hideki Mizuhara ,  Yasunori Inoue ,  Noriaki Kojima ,  Hiroyuki Watanabe ,  Shinya Nakano

发明人： Ryosuke Usui ,  Hideki Mizuhara ,  Yasunori Inoue ,  Noriaki Kojima ,  Hiroyuki Watanabe ,  Shinya Nakano

IPC分类号： H05B3/68

CPC分类号： G06F1/203 ,  H05K7/20445

摘要： In a heat radiation structure for an electronic appliance in which heat generated in a heat generating member inside a flap of the electronic appliance is radiated to a space outside the flap, a heat radiation plate integrally formed with a circuit element is thermally coupled to the heat generating member and is exposed outside the flap. Heat generated in the heat generating member is conducted to the heat radiation plate via a contact portion and is radiated to a space outside the flap from an exposed surface along with heat generated in the circuit element.

摘要翻译： 在用于电子设备的热辐射结构中，其中在电子设备的翼片内的发热元件中产生的热量辐射到翼片外部的空间，与电路元件整体形成的散热板热耦合到热 并且暴露在皮瓣外部。 在发热元件中产生的热量经由接触部分被传导到散热板，并且随着在电路元件中产生的热量从露出的表面辐射到翼片之外的空间。

公开(公告)号：US06235648B1

公开(公告)日：2001-05-22

申请号：US09160044

申请日：1998-09-25

申请人： Hideki Mizuhara ,  Hiroyuki Watanabe ,  Naoteru Matsubara

发明人： Hideki Mizuhara ,  Hiroyuki Watanabe ,  Naoteru Matsubara

IPC分类号： H01L21461

CPC分类号： H01L21/76859 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02137 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02321 ,  H01L21/02351 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31155 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/76825 ,  H01L21/76829

摘要： A semiconductor device including an insulation film superior in insulation characteristic is obtained. Boron ions are introduced by ion implantation into an organic SOG film with a silicon nitride film formed on the organic SOG film. By this boron implantation, the property of the organic SOG film is modified. The moisture and hydroxyl group included in the film are greatly reduced irrespective of the amount of dose of ions. By using such a layered film of a modified SOG film and a silicon nitride film thereupon as an interlayer insulation film or a passivation film, the water resistance of a semiconductor device can be improved sufficiently.

摘要翻译： 获得包括绝缘特性优异的绝缘膜的半导体器件。 通过离子注入将硼离子引入到在有机SOG膜上形成的氮化硅膜的有机SOG膜中。 通过这种硼注入，有机SOG膜的性质被改变。 包括在膜中的水分和羟基与离子的剂量无关地大大降低。 通过使用这样的改性SOG膜和氮化硅膜的分层膜作为层间绝缘膜或钝化膜，可以充分提高半导体器件的耐水性。

公开(公告)号：US5898221A

公开(公告)日：1999-04-27

申请号：US953822

申请日：1997-09-25

申请人： Hideki Mizuhara ,  Shinichi Tanimoto ,  Hiroyuki Watanabe ,  Yasunori Inoue

发明人： Hideki Mizuhara ,  Shinichi Tanimoto ,  Hiroyuki Watanabe ,  Yasunori Inoue

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/53223 ,  H01L21/76838 ,  H01L23/5329 ,  H01L2924/0002

摘要： A semiconductor device having a semiconductor substrate and a wiring layer, which is doped with an impurity, located on the substrate. The semiconductor device has upper and lower wiring layers apart from each other. An electric insulating film electrically insulates between the upper and lower wiring layers. The insulating film has a contact hole. A wiring material is packed with the contact hole to electrically connect the upper and lower wiring layers. The impurity is contained in the lower wiring layer to decrease its resistivity.

摘要翻译： 具有半导体衬底和掺杂有杂质的布线层的半导体器件位于衬底上。 半导体器件具有彼此分开的上和下布线层。 电绝缘膜在上下布线层之间电绝缘。 绝缘膜具有接触孔。 布线材料装有接触孔以电连接上下布线层。 杂质包含在下布线层中以降低其电阻率。

公开(公告)号：US06794283B2

公开(公告)日：2004-09-21

申请号：US09320271

申请日：1999-05-27

申请人： Hiroyuki Watanabe ,  Hideki Mizuhara ,  Shinichi Tanimoto ,  Atsuhiro Nishida ,  Yoshikazu Yamaoka ,  Yasunori Inoue

发明人： Hiroyuki Watanabe ,  Hideki Mizuhara ,  Shinichi Tanimoto ,  Atsuhiro Nishida ,  Yoshikazu Yamaoka ,  Yasunori Inoue

IPC分类号： H01L214763

CPC分类号： H01L21/02126 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02351 ,  H01L21/31155 ,  H01L21/316 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76825 ,  H01L23/5226 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device superior in reliability and suitable for microminiaturization is provided. An organic SOG film is formed on a silicon oxide film. Boron ions are implanted into the organic SOG film. By introducing boron ions into the organic SOG film, the organic components in the film are decomposed. Also, the moisture and hydroxyl group included in the film are reduced. After a metal interconnection is embedded in a modified SOG film by the Damascene method, a modified SOG film is formed thereon. Then, contact holes are formed. After a contact hole interconnection is embedded in the contact holes, a modified SOG film and an upper metal interconnection are formed by the Damascene method.

摘要翻译： 提供了可靠性优异并且适合于微型化的半导体器件。 在氧化硅膜上形成有机SOG膜。 将硼离子注入到有机SOG膜中。 通过将硼离子引入有机SOG膜中，膜中的有机成分被分解。 此外，膜中包含的水分和羟基也被还原。 通过镶嵌法将金属互连嵌入改性SOG膜中之后，形成改性SOG膜。 然后，形成接触孔。 在接触孔嵌入接触孔互连后，通过镶嵌法形成改性SOG膜和上金属互连。