发明授权
US06326631B1 Ion implantation device arranged to select neutral ions from the ion beam
失效
离子注入装置布置成从离子束中选择中性离子
- 专利标题： Ion implantation device arranged to select neutral ions from the ion beam
- 专利标题（中）： 离子注入装置布置成从离子束中选择中性离子
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申请号： US09400762申请日： 1999-09-21
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公开(公告)号： US06326631B1公开(公告)日： 2001-12-04
- 发明人: Jarig Politiek , Gerrit C. Van Hoften
- 申请人： Jarig Politiek , Gerrit C. Van Hoften
- 优先权： EP98203227 19980924
- 主分类号： H01J37317
- IPC分类号： H01J37317
摘要：
An ion implantation device includes at least two successive deceleration stages the first deceleration stage, looking in the downstream direction, being arranged to decelerate the ion beam, to deflect the ion beam, and to form an intermediate crossover, whereas the second deceleration stage is arranged to decelerate the ion beam further and to subject the beam to a converging effect.
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