公开(公告)号：US06326631B1

公开(公告)日：2001-12-04

申请号：US09400762

申请日：1999-09-21

申请人： Jarig Politiek ,  Gerrit C. Van Hoften

发明人： Jarig Politiek ,  Gerrit C. Van Hoften

IPC分类号： H01J37317

CPC分类号： H01J37/3171 ,  H01J2237/0475

摘要： An ion implantation device includes at least two successive deceleration stages the first deceleration stage, looking in the downstream direction, being arranged to decelerate the ion beam, to deflect the ion beam, and to form an intermediate crossover, whereas the second deceleration stage is arranged to decelerate the ion beam further and to subject the beam to a converging effect.

摘要翻译： 离子注入装置包括至少两个连续的减速阶段，在下游方向上看的第一减速阶段被布置成使离子束减速，使离子束偏转并形成中间交叉，而第二减速阶段被布置 以进一步减速离子束并使束受到会聚效应。

公开(公告)号：US4260893A

公开(公告)日：1981-04-07

申请号：US36943

申请日：1979-05-07

申请人： Pieter Bakker ,  Rudolf S. Kuit ,  Jarig Politiek

发明人： Pieter Bakker ,  Rudolf S. Kuit ,  Jarig Politiek

IPC分类号： H01J37/147 ,  G01T1/29 ,  H01J37/304 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027 ,  H01L21/265 ,  H04N3/22 ,  H01J37/00

CPC分类号： H04N3/22 ,  G01T1/29 ,  H01J37/3045

摘要： A device for directing electrically charged particles towards a target present on a connection place of a support comprises an electrostatic deflection system having deflection plates for controlling a beam of charged particles in two mutually perpendicular directions towards the target with the deflection plates being brought at a desired voltage by means of an electronic control system, and two juxtaposed rods of electrically conductive material being provided on oppositely located sides of the target with the rods being each connected by a resistor to a fixed potential and being furthermore connected to a control device which reacts to a voltage which arises across the resistors if the beam of electrically charged particles impinges on a rod and which, if the beam, during each stroke across the target, impinges on a combination of rods other than the two innermost rods, produces a correction voltage for the control of the deflection plates.

摘要翻译： 用于将带电粒子引导到存在于支撑件的连接位置上的靶的装置包括具有偏转板的静电偏转系统，该偏转板用于控制朝向靶的两个相互垂直的方向上的带电粒子束，使偏转板处于期望的位置 电压通过电子控制系统和两个并置的导电材料棒设置在目标的相对位置的侧面上，其中每个杆通过电阻器连接到固定电位，并且还连接到控制装置，该控制装置响应于 如果带电粒子的束碰撞在杆上，并且如果梁在跨过靶的每次冲程期间撞击在除两个最内的杆之外的杆的组合上，则该电压产生在电阻器两端产生的校正电压 偏转板的控制。

公开(公告)号：US4260897A

公开(公告)日：1981-04-07

申请号：US036942

申请日：1979-05-07

申请人： Pieter Bakker ,  Rudolf S. Kuit ,  Jarig Politiek

发明人： Pieter Bakker ,  Rudolf S. Kuit ,  Jarig Politiek

IPC分类号： H01J37/24 ,  H01J37/304 ,  H01J37/317 ,  H01L21/265 ,  H01J37/00

CPC分类号： H01J37/3045 ,  H01J37/24 ,  H01J37/3171

摘要： In a method of implanting ions in a target, an ion beam is directed onto the target by means of an electrostatic deflection system where the beam describes a pattern over the target dependent on voltage variations on two mutually perpendicular sets of deflection plates. One of the sets of deflection plates is subjected to a varying voltage difference and the other set of deflection plates is subjected to a constant voltage difference so that the ion beam describes a straight line on the target, while at the end of the beam stroke a fixed voltage difference is superimposed on the plates having a constant voltage difference and the variation in the voltage difference is reversed in the plates having a varying voltage difference in such manner that lines described consecutively by the ion beam are always parallel and are situated at a fixed distance from each other.

摘要翻译： 在将离子注入靶中的方法中，离子束通过静电偏转系统被引导到目标上，其中光束根据两个相互垂直的偏转板组上的电压变化来描述目标上的图案。 偏转板组中的一个受到变化的电压差，另一组偏转板受到恒定的电压差，使得离子束描述目标上的直线，而在光束笔划结束时 固定电压差叠加在具有恒定电压差的板上，并且具有变化的电压差的板中的电压差的变化相反，使得由离子束连续描绘的线总是平行并且位于固定的 距离彼此。

公开(公告)号：US06462332B1

公开(公告)日：2002-10-08

申请号：US09689059

申请日：2000-10-12

申请人： Petrus Hubertus Franciscus Trompenaars ,  Bernardus Hendrikus Wilhelmus Hendriks ,  Jarig Politiek

发明人： Petrus Hubertus Franciscus Trompenaars ,  Bernardus Hendrikus Wilhelmus Hendriks ,  Jarig Politiek

IPC分类号： H01S100

CPC分类号： H01J37/026 ,  H01J2237/0045 ,  H01J2237/2522 ,  H01J2237/31701

摘要： A particle optical apparatus, such as an ion implantation apparatus, an Auger electron spectrometer, an XPS analysis apparatus, and the like, is provided with a radiation source by means of which a wafer or substrate brought into the apparatus can be bombarded by radiation providing for at least a positively charged surface layer of the wafer or substrate. The apparatus further comprises a charge neutralization device with means for providing secondary electron emission and transport means for transporting secondary electrons. This transport means device is provided with a hollow insulating structure for controlled electron transport based on secondary electron emission, particularly in the form of an electron fibre with electrodes at the entrance and exit. The exit of the electron fibre forms a clean secondary electron source.

摘要翻译： 诸如离子注入装置，俄歇电子能谱仪，XPS分析装置等的粒子光学装置设置有辐射源，通过该辐射源，被带入设备中的晶片或衬底可以被辐射提供 用于晶片或衬底的至少带正电的表面层。 该装置还包括具有用于提供用于传输二次电子的二次电子发射和传输装置的装置的电荷中和装置。 该输送装置具有中空绝缘结构，用于基于二次电子发射的受控电子传输，特别是具有在入口和出口处具有电极的电子束的形式。 电子束的出口形成清洁的二次电子源。

公开(公告)号：US5354696A

公开(公告)日：1994-10-11

申请号：US95978

申请日：1993-07-22

申请人： Doeke Oostra ,  Jozef J. M. Ottenheim ,  Jarig Politiek

发明人： Doeke Oostra ,  Jozef J. M. Ottenheim ,  Jarig Politiek

IPC分类号： H01L21/265 ,  H01L21/331 ,  H01L29/737 ,  H01L21/268

CPC分类号： H01L29/66242 ,  H01L21/26506 ,  H01L21/2658 ,  H01L29/7375

摘要： A method of manufacturing a semiconductor device in which a surface zone (3) adjoining a surface (2) is formed in a silicon semiconductor body (1) by local application of carbon and dopant atoms, the carbon atoms being provided by means of implantation (4). Halogen atoms are provided simultaneously with the carbon atoms by means of an implantation with ions of a carbon-halogen compound, after which a heat treatment is carried out such that non-bonded halogen atoms are removed from the surface zone (3). Such a method is suitable for making a surface zone (3) which has a greater bandgap than silicon. The surface (3) is suitable, for example, for making an emitter region of a heterojunction bipolar transistor (HBT).

摘要翻译： 一种半导体器件的制造方法，其中通过局部施加碳和掺杂剂原子在硅半导体本体（1）中形成与表面（2）相邻的表面区域（3），所述碳原子通过注入（ 4）。 卤素原子通过用碳 - 卤素化合物的离子注入与碳原子同时提供，然后进行热处理，使得未键合的卤素原子从表面区域（3）除去。 这种方法适用于制造具有比硅更大的带隙的表面区（3）。 表面（3）例如适用于制造异质结双极晶体管（HBT）的发射极区域。

公开(公告)号：US5151605A

公开(公告)日：1992-09-29

申请号：US679976

申请日：1991-04-03

申请人： Jarig Politiek ,  Henricus J. Ligthart

发明人： Jarig Politiek ,  Henricus J. Ligthart

IPC分类号： C23C14/48 ,  H01J27/22 ,  H01J37/147 ,  H01J37/30 ,  H01J37/317 ,  H01L21/265

CPC分类号： H01J37/1477 ,  H01J37/3007

摘要： A low-energetic charged particle beam, involving only a slight space charge effect, can be obtained by high-frequency deflection of a charged particle beam before deceleration. Using a deceleration element provided with curved surfaces and a slit-shaped aperture, a focusing effect is obtained so that the charged particle beam is imaged along a linear path on a target surface. For implantation of a semiconductor substrate, a uniform and shallow implantation can be achieved at adequate speed by means of a low-energetic ion beam obtained in the above manner.