发明授权
- 专利标题： Semiconductor light emitting element and method for fabricating the same
- 专利标题（中）： 半导体发光元件及其制造方法
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申请号： US09080121申请日： 1998-05-15
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公开(公告)号： US06326638B1公开(公告)日： 2001-12-04
- 发明人: Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
- 申请人： Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
- 优先权： JP7-006405 19950119
- 主分类号： H01L2715
- IPC分类号： H01L2715
摘要：
The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.
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