发明授权
US06329273B1 Solid-source doping for source/drain to eliminate implant damage
有权
用于源极/漏极的固体源掺杂以消除植入物损伤
- 专利标题： Solid-source doping for source/drain to eliminate implant damage
- 专利标题（中）： 用于源极/漏极的固体源掺杂以消除植入物损伤
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申请号： US09430410申请日： 1999-10-29
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公开(公告)号： US06329273B1公开(公告)日： 2001-12-11
- 发明人: Timothy Thurgate , Carl Robert Huster
- 申请人： Timothy Thurgate , Carl Robert Huster
- 主分类号： H01L21225
- IPC分类号： H01L21225
摘要：
A method of manufacturing a flash memory device in which minimal gate edge lifting is accomplished by minimally oxidizing the gate stack and exposed surface of the substrate, anisotropically etching the layer of oxide from the substrate, forming a doped solid source material on portions of the substrate in which source regions are to be formed and diffusing the dopants from the solid source material into the substrate.
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