发明授权
- 专利标题: Copper sputtering target assembly and method of making same
- 专利标题(中): 铜溅射靶组件及其制造方法
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申请号: US09615474申请日: 2000-07-13
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公开(公告)号: US06331234B1公开(公告)日: 2001-12-18
- 发明人: Janine K. Kardokus , Chi tse Wu , Christopher L. Parfeniuk , Jane E. Buehler
- 申请人: Janine K. Kardokus , Chi tse Wu , Christopher L. Parfeniuk , Jane E. Buehler
- 主分类号: C23C1434
- IPC分类号: C23C1434
摘要:
Described is a sputtering target assembly of high purity copper diffusion bonded to a precipitation hardened aluminum alloy backing plate via an intermediate layer of a CuCr alloy and in which the copper contains a micro alloy addition of at least one of Ag, Su, Te, In, Mg, B, Bi, Sb and/or P. Also disclosed is a method that includes preparation of a master alloy for addition to high purity copper and fabricating, heat treating and diffusion bonding processes to produce a sputtering target assembly with a stable fine-grained target microstructure.
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