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公开(公告)号：US06645427B1
公开(公告)日：2003-11-11
申请号：US09556488
申请日：2000-04-21
IPC分类号： C22C900
CPC分类号： C23C14/3414 , C23C14/3407
摘要： Described is a sputtering target assembly of high purity copper diffusion bonded to a precipitation hardened aluminum alloy backing plate via an intermediate layer of a CuCr alloy and in which the copper contains a micro alloy addition of at least one of Ag, Su, Te, In, Mg, B, Bi, Sb and/or P. Also disclosed is a method that includes preparation of a master alloy for addition to high purity copper and fabricating, heat treating and diffusion bonding processes to produce a sputtering target assembly with a stable fine-grained target microstructure.
摘要翻译： 描述了通过CuCr合金的中间层与沉淀硬化的铝合金背板结合的高纯度铜扩散的溅射靶组件，其中铜含有Ag，Su，Te，In中的至少一种的微合金添加 ，Mg，B，Bi，Sb和/或P.还公开了一种方法，其包括制备用于加入高纯度铜的母合金，以及制造，热处理和扩散结合工艺以制备具有稳定精细度的溅射靶组件 目标微观结构。
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2.发明授权公开(公告)号：US06858102B1
公开(公告)日：2005-02-22
申请号：US09714714
申请日：2000-11-15
CPC分类号： C22C9/00 , C23C14/3407 , C23C14/3414 , Y10T428/1275
摘要： The invention includes a sputtering target containing copper of a purity of at least about 99.999 wt. %, and at least one component selected from the group consisting of Ag, Sn, Te, In, B, Bi, Sb, and P dispersed within the copper. The total of Ag, Sn, Te, In, B, Bi, Sb, and P within the copper is from at least 0.3 ppm to about 10 ppm. The sputtering target has a substantially uniform grain size of less than or equal to about 50 micrometers throughout the copper and the at least one component.
摘要翻译： 本发明包括含有至少约99.999重量％的纯度的铜的溅射靶。 ％，以及选自分散在铜内的Ag，Sn，Te，In，B，Bi，Sb和P中的至少一种成分。 铜内的Ag，Sn，Te，In，B，Bi，Sb和P的总和为至少0.3ppm至约10ppm。 在整个铜和至少一种组分中，溅射靶具有小于或等于约50微米的基本均匀的晶粒尺寸。
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公开(公告)号：US06849139B2
公开(公告)日：2005-02-01
申请号：US10027992
申请日：2001-12-19
CPC分类号： C22C9/00 , C23C14/3407 , C23C14/3414 , Y10T428/1275
摘要： The invention includes a method of forming a sputtering target containing copper of a purity of at least about 99.999 wt. %, and at least one component selected from the group consisting of Ag, Sn, Te, In, B, Bi, Sb, and P dispersed within the copper. The total of Ag, Sn, Te, In, B, Bi, Sb, and P within the copper is from at least 0.3 ppm to about 10 ppm. The sputtering target has a substantially uniform grain size of less than or equal to about 50 micrometers throughout the copper and the at least one component.
摘要翻译： 本发明包括形成含有至少约99.999重量％纯度的铜的溅射靶的方法。 ％，以及选自分散在铜内的Ag，Sn，Te，In，B，Bi，Sb和P中的至少一种成分。 铜内的Ag，Sn，Te，In，B，Bi，Sb和P的总和为至少0.3ppm至约10ppm。 整个铜和至少一种组分，溅射靶具有小于或等于约50微米的基本上均匀的晶粒尺寸。
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公开(公告)号：US06331234B1
公开(公告)日：2001-12-18
申请号：US09615474
申请日：2000-07-13
IPC分类号： C23C1434
CPC分类号： C23C14/3414 , C23C14/3407
摘要： Described is a sputtering target assembly of high purity copper diffusion bonded to a precipitation hardened aluminum alloy backing plate via an intermediate layer of a CuCr alloy and in which the copper contains a micro alloy addition of at least one of Ag, Su, Te, In, Mg, B, Bi, Sb and/or P. Also disclosed is a method that includes preparation of a master alloy for addition to high purity copper and fabricating, heat treating and diffusion bonding processes to produce a sputtering target assembly with a stable fine-grained target microstructure.
摘要翻译： 描述了通过CuCr合金的中间层与沉淀硬化的铝合金背板结合的高纯度铜扩散的溅射靶组件，其中铜含有Ag，Su，Te，In中的至少一种的微合金添加 ，Mg，B，Bi，Sb和/或P.还公开了一种方法，其包括制备用于加入高纯度铜的母合金，以及制造，热处理和扩散结合工艺以制备具有稳定精细度的溅射靶组件 目标微观结构。
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公开(公告)号：US6113761A
公开(公告)日：2000-09-05
申请号：US324299
申请日：1999-06-02
CPC分类号： C23C14/3414 , C23C14/3407
摘要： Described is a sputtering target assembly of high purity copper diffusion bonded to a precipitation hardened aluminum alloy backing plate via an intermediate layer of a CuCr alloy and in which the copper contains a micro alloy addition of at least one of Ag, Su, Te, In, Mg, B, Bi, Sb and/or P. Also disclosed is a method that includes preparation of a master alloy for addition to high purity copper and fabricating, heat treating and diffusion bonding processes to produce a sputtering target assembly with a stable fine-grained target microstructure.
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6.发明授权公开(公告)号：US07767043B2
公开(公告)日：2010-08-03
申请号：US12235427
申请日：2008-09-22
申请人： Vladimir M. Segal , Wuwen Yi , Stephane Ferrasse , Chi tse Wu , Susan D. Strothers , Frank A. Alford , William B. Willett
发明人： Vladimir M. Segal , Wuwen Yi , Stephane Ferrasse , Chi tse Wu , Susan D. Strothers , Frank A. Alford , William B. Willett
CPC分类号： C23C14/3414 , B21C23/001
摘要： The invention includes a copper-comprising sputtering target. The target is monolithic or bonded and contains at least 99.99% copper by weight and has an average grain size of from 1 micron to 50 microns. The copper-comprising target has a yield strength of greater than or equal to about 15 ksi and a Brinell hardness (HB) of greater than about 40. The invention includes copper alloy monolithic and bonded sputtering targets consisting essentially of less than or equal to about 99.99% copper by weight and a total amount of alloying element(s) of at least 100 ppm and less than 10% by weight. The targets have an average grain size of from less than 1 micron to 50 microns and have a grain size non-uniformity of less than about 15% standard deviation (1-sigma) throughout the target. The invention additionally includes methods of producing bonded and monolithic copper and copper alloy targets.
摘要翻译： 本发明包括含铜溅射靶。 目标是整体或结合的，并且含有至少99.99重量％的铜，并且具有1微米至50微米的平均粒度。 包含铜的靶具有大于或等于约15ksi的屈服强度和大于约40的布氏硬度（HB）。本发明包括基本上由小于或等于约 99.99重量％的铜，合金元素的总量为至少100ppm且小于10重量％。 靶具有小于1微米至50微米的平均粒度，并且在整个靶上具有小于约15％标准偏差（1-sigma）的粒度不均匀性。 本发明还包括生产粘结和单片铜和铜合金靶的方法。
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7.发明申请SPUTTERING TARGETS, SPUTTER REACTORS, METHODS OF FORMING CAST INGOTS, AND METHODS OF FORMING METALLIC ARTICLES 审中-公开溅射靶，溅射反应器，形成铸件的方法和形成金属制品的方法公开(公告)号：US20120273097A1
公开(公告)日：2012-11-01
申请号：US13546705
申请日：2012-07-11
申请人： Chi tse Wu , Wuwen Yi , Frederick B. Hidden , Susan D. Strothers
发明人： Chi tse Wu , Wuwen Yi , Frederick B. Hidden , Susan D. Strothers
CPC分类号： H01J37/3423 , B21J5/00 , B21J5/02 , B21K21/00 , B22D7/00 , B22D27/08 , C22F1/00 , C22F1/08 , C23C14/3407 , C23C14/3414 , H01J37/3408
摘要： The invention encompasses a method of forming a metallic article. An ingot of metallic material is provided, and such ingot has an initial thickness. The ingot is subjected to hot forging. The product of the hot forging is quenched to fix an average grain size of less than 250 microns within the metallic material. The quenched material can be formed into a three dimensional physical vapor deposition target. The invention also includes a method of forming a cast ingot. In particular aspects, the cast ingot is a high-purity copper material. The invention also includes physical vapor deposition targets, and magnetron plasma sputter reactor assemblies.
摘要翻译： 本发明包括形成金属制品的方法。 提供金属材料锭，这种锭具有初始厚度。 铸锭经受热锻。 将热锻的产品淬火以在金属材料内固定小于250微米的平均粒度。 淬火材料可以形成三维物理气相沉积靶。 本发明还包括一种形成铸锭的方法。 在特定方面，铸锭是高纯度铜材料。 本发明还包括物理气相沉积靶和磁控管等离子体溅射反应器组件。
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8.发明申请公开(公告)号：US20090020192A1
公开(公告)日：2009-01-22
申请号：US12235427
申请日：2008-09-22
申请人： Vladimir M. Segal , Wuwen Yi , Stephane Ferrasse , Chi tse Wu , Susan D. Strothers , Frank A. Alford , William B. Willett
发明人： Vladimir M. Segal , Wuwen Yi , Stephane Ferrasse , Chi tse Wu , Susan D. Strothers , Frank A. Alford , William B. Willett
IPC分类号： C22F1/08
CPC分类号： C23C14/3414 , B21C23/001
摘要： The invention includes a copper-comprising sputtering target. The target is monolithic or bonded and contains at least 99.99% copper by weight and has an average grain size of from 1 micron to 50 microns. The copper-comprising target has a yield strength of greater than or equal to about 15 ksi and a Brinell hardness (HB) of greater than about 40. The invention includes copper alloy monolithic and bonded sputtering targets consisting essentially of less than or equal to about 99.99% copper by weight and a total amount of alloying element(s) of at least 100 ppm and less than 10% by weight. The targets have an average grain size of from less than 1 micron to 50 microns and have a grain size non-uniformity of less than about 15% standard deviation (1-sigma) throughout the target. The invention additionally includes methods of producing bonded and monolithic copper and copper alloy targets.
摘要翻译： 本发明包括含铜溅射靶。 目标是整体或结合的，并且含有至少99.99重量％的铜，并且具有1微米至50微米的平均粒度。 包含铜的靶具有大于或等于约15ksi的屈服强度和大于约40的布氏硬度（HB）。本发明包括铜合金整体和结合的溅射靶，其基本上由小于或等于约 99.99重量％的铜，合金元素的总量为至少100ppm且小于10重量％。 靶具有小于1微米至50微米的平均粒度，并且在整个靶上具有小于约15％标准偏差（1-sigma）的粒度不均匀性。 本发明还包括生产粘结和单片铜和铜合金靶的方法。
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9.发明申请公开(公告)号：US20100059147A9
公开(公告)日：2010-03-11
申请号：US12235427
申请日：2008-09-22
申请人： Vladimir M. Segal , Wuwen Yi , Stephane Ferrasse , Chi tse Wu , Susan D. Strothers , Frank A. Alford , William B. Willett
发明人： Vladimir M. Segal , Wuwen Yi , Stephane Ferrasse , Chi tse Wu , Susan D. Strothers , Frank A. Alford , William B. Willett
IPC分类号： C22F1/08
CPC分类号： C23C14/3414 , B21C23/001
摘要： The invention includes a copper-comprising sputtering target. The target is monolithic or bonded and contains at least 99.99% copper by weight and has an average grain size of from 1 micron to 50 microns. The copper-comprising target has a yield strength of greater than or equal to about 15 ksi and a Brinell hardness (HB) of greater than about 40. The invention includes copper alloy monolithic and bonded sputtering targets consisting essentially of less than or equal to about 99.99% copper by weight and a total amount of alloying element(s) of at least 100 ppm and less than 10% by weight. The targets have an average grain size of from less than 1 micron to 50 microns and have a grain size non-uniformity of less than about 15% standard deviation (1-sigma) throughout the target. The invention additionally includes methods of producing bonded and monolithic copper and copper alloy targets.
摘要翻译： 本发明包括含铜溅射靶。 目标是整体或结合的，并且含有至少99.99重量％的铜，并且具有1微米至50微米的平均粒度。 包含铜的靶具有大于或等于约15ksi的屈服强度和大于约40的布氏硬度（HB）。本发明包括基本上由小于或等于约 99.99重量％的铜，合金元素的总量为至少100ppm且小于10重量％。 靶具有小于1微米至50微米的平均粒度，并且在整个靶上具有小于约15％标准偏差（1-sigma）的粒度不均匀性。 本发明还包括生产粘结和单片铜和铜合金靶的方法。
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公开(公告)号：US07618520B2
公开(公告)日：2009-11-17
申请号：US11234615
申请日：2005-09-23
申请人： Chi tse Wu , Stephane Ferrasse , Frank C. Alford , Susanne Grabmeier , Werner H. Hort , Jaeyeon Kim , Susan D. Strothers , Andrew Wragg , Robert Prater
发明人： Chi tse Wu , Stephane Ferrasse , Frank C. Alford , Susanne Grabmeier , Werner H. Hort , Jaeyeon Kim , Susan D. Strothers , Andrew Wragg , Robert Prater
IPC分类号： C23C14/35
CPC分类号： C23C14/3407 , H01J37/3423 , H01J37/3426
摘要： The invention includes a target construction having a sputtering region and a flange region laterally outward relative to the sputtering region. The flange region has a front surface disposed on a front face of the construction and a back surface opposing the front surface. An o-ring groove is disposed within the flange region. The o-ring groove has a planar base surface which has a first width and has an orifice disposed along the front surface of the flange. The orifice has a second width as measured parallel relative to the base surface. The second width is greater than the first width. The flange surfaces can additionally be protected from rubbing by a layer of protective material.
摘要翻译： 本发明包括具有溅射区域和相对于溅射区域横向向外的凸缘区域的目标结构。 凸缘区域具有设置在结构的正面上的前表面和与前表面相对的后表面。 O形环槽设置在凸缘区域内。 O形环槽具有平坦的基面，其具有第一宽度并且具有沿凸缘的前表面设置的孔。 孔口具有相对于基底表面平行测量的第二宽度。 第二宽度大于第一宽度。 凸缘表面可另外被保护，免受一层保护材料的摩擦。
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