发明授权
US06333945B1 Semiconductor laser device 失效
半导体激光器件

  • 专利标题: Semiconductor laser device
  • 专利标题(中): 半导体激光器件
  • 申请号: US09215259
    申请日: 1998-12-18
  • 公开(公告)号: US06333945B1
    公开(公告)日: 2001-12-25
  • 发明人: Katsunori AbeKinya Atsumi
  • 申请人: Katsunori AbeKinya Atsumi
  • 优先权: JP9-358192 19971225; JP10-256645 19980910
  • 主分类号: H01S520
  • IPC分类号: H01S520
Semiconductor laser device
摘要:
An active layer in which laser light is generated by injecting driving current therein is sandwiched between semiconductor layers. The active layer has a multi-quantum-well structure, and the layers located at both sides of the active layer are made of an AlGaAs-based material. Refractive indices of the layers are set asymmetrically with respect to the active layer by properly selecting aluminum-mixing ratios in AlGa. Since the light generated in the active layer is distributed more in a layer having a higher refractive index, a peak of the light distribution is shifted from the active layer into the layer having a higher refractive index. Thus, energy concentration to the active layer is avoided. A thickness of the layer having a higher refractive index may be made thicker to further enhance the energy concentration shift from the active layer.
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