发明授权
- 专利标题: Semiconductor laser device
- 专利标题(中): 半导体激光器件
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申请号: US09215259申请日: 1998-12-18
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公开(公告)号: US06333945B1公开(公告)日: 2001-12-25
- 发明人: Katsunori Abe , Kinya Atsumi
- 申请人: Katsunori Abe , Kinya Atsumi
- 优先权: JP9-358192 19971225; JP10-256645 19980910
- 主分类号: H01S520
- IPC分类号: H01S520
摘要:
An active layer in which laser light is generated by injecting driving current therein is sandwiched between semiconductor layers. The active layer has a multi-quantum-well structure, and the layers located at both sides of the active layer are made of an AlGaAs-based material. Refractive indices of the layers are set asymmetrically with respect to the active layer by properly selecting aluminum-mixing ratios in AlGa. Since the light generated in the active layer is distributed more in a layer having a higher refractive index, a peak of the light distribution is shifted from the active layer into the layer having a higher refractive index. Thus, energy concentration to the active layer is avoided. A thickness of the layer having a higher refractive index may be made thicker to further enhance the energy concentration shift from the active layer.
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