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    Laser equipment
    1.
    发明申请
    Laser equipment 有权
    激光设备

    公开(公告)号：US20090238221A1

    公开(公告)日：2009-09-24

    申请号：US12457011

    申请日：2009-05-29

    申请人： Nobuyuki Otake ,  Katsunori Abe

    发明人： Nobuyuki Otake ,  Katsunori Abe

    IPC分类号： H01S3/10

    CPC分类号： H01S3/0627 ,  H01S3/0604 ,  H01S3/08086 ,  H01S3/094084 ,  H01S3/09415 ,  H01S3/109 ,  H01S3/2383 ,  H01S3/2391 ,  H01S5/423

    摘要： Laser equipment for outputting output lights having different wavelengths includes: a substrate; an excitation light generation element for emitting excitation lights including surface emitting laser elements and disposed on the substrate; and a light converter having a pair of second reflection layers and a solid laser medium layer, both of which provide a resonator. The solid laser medium layer is capable of generating lights having different peak wavelengths by receiving the excitation lights. The light converter is disposed on an output surface of the excitation light generation element.

    摘要翻译： 用于输出具有不同波长的输出光的激光设备包括：基板; 用于发射包括表面发射激光元件并且设置在所述基板上的激发光的激发光产生元件; 以及具有一对第二反射层和固体激光介质层的光转换器，两者均提供谐振器。 固体激光介质层能够通过接收激发光来产生具有不同峰值波长的光。 光转换器设置在激发光发生元件的输出表面上。

    Laser apparatus
    2.
    发明申请
    Laser apparatus 审中-公开
    激光设备

    公开(公告)号：US20080212630A1

    公开(公告)日：2008-09-04

    申请号：US12071928

    申请日：2008-02-28

    申请人： Nobuyuki Otake ,  Katsunori Abe

    发明人： Nobuyuki Otake ,  Katsunori Abe

    IPC分类号： H01S5/04 ,  H01S5/18

    CPC分类号： H01S5/14 ,  H01S3/005 ,  H01S3/025 ,  H01S3/0604 ,  H01S3/0627 ,  H01S3/09415 ,  H01S3/109 ,  H01S3/2391 ,  H01S5/18305 ,  H01S5/18369 ,  H01S5/423

    摘要： A laser apparatus includes an excitation light generator for emitting excitation light and a wavelength converter including a solid laser medium for emitting laser light by converting a wavelength of the excitation light. The excitation light generator includes a surface-emitting laser having a first reflector with top and bottom reflectors and an active layer disposed between the top and bottom reflectors. The excitation light generator further includes a second reflector configured to highly reflect the excitation light. The solid laser medium is disposed between the surface-emitting laser device and the second reflector. Reflectivities of the top and bottom reflectors of the first reflector are set so that FWHM of the solid laser medium at the wavelength of the excitation light is greater than a resonance wavelength range of the surface-emitting laser device.

    摘要翻译： 激光装置包括用于发射激发光的激发光发生器和包括通过转换激发光的波长来发射激光的固体激光介质的波长转换器。 激发光发生器包括表面发射激光器，其具有具有顶部和底部反射器的第一反射器和设置在顶部和底部反射器之间的有源层。 激发光发生器还包括被配置为高度反射激发光的第二反射器。 固体激光介质设置在表面发射激光器件和第二反射器之间。 设置第一反射器的顶部和底部反射器的反射率使得激发光的波长处的固体激光介质的FWHM大于表面发射激光器件的谐振波长范围。

    Semiconductor laser device
    4.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US5559819A

    公开(公告)日：1996-09-24

    申请号：US423345

    申请日：1995-04-18

    申请人： Katsunori Abe ,  Yuji Kimura ,  Kinya Atsumi ,  Yoshiki Ueno ,  Noriyuki Matsushita

    发明人： Katsunori Abe ,  Yuji Kimura ,  Kinya Atsumi ,  Yoshiki Ueno ,  Noriyuki Matsushita

    IPC分类号： H01S5/20 ,  H01S5/22 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/34 ,  H01S5/22 ,  H01S5/3432

    摘要： The semiconductor laser device provides a large output laser beam approximating a circular shape. Formed on an n-GaAs substrate is an n-GaAs layer, further thereon in mesa type with an n-Al.sub.0.4 Ga.sub.0.6 As clad layer, an n-Al.sub.0.2 Ga.sub.0.8 As optical guide layer, an active layer formed of Al.sub.0.2 Ga.sub.0.8 As/GaAs multi-quantum well structure, a p-Al.sub.0.2 Ga.sub.0.8 As optical guide layer, a p-Al.sub.0.4 Ga.sub.0.6 As clad layer, and a p-GaAs layer. A thickness of the active layer is made equal to 127.5 nm, and a sum of thicknesses of the active layer and the optical guide layers and is made equal to or more than 1.5 .mu.m. On the n-GaAs layer and the upper surface of mesa shaped portion are formed an insulating film and a p-type electrode, the stripe width of which is equal to 400 .mu.m.

    摘要翻译： 半导体激光器件提供近似圆形的大输出激光束。 在n-GaAs衬底上形成n-GaAs层，其中还具有n-Al0.4Ga0.6As包层，n-Al0.2Ga0.8As光导层，由Al0形成的有源层的台面型。 2Ga0.8As / GaAs多量子阱结构，p-Al0.2Ga0.8As光导层，p-Al0.4Ga0.6As包层和p-GaAs层。 有源层的厚度为127.5nm，有源层和导光层的厚度之和为1.5μm以上。 在n-GaAs层和台面形状部分的上表面上形成绝缘膜和p型电极，其条纹宽度等于400μm。

    Process for fabricating a complementary MIS transistor
    5.
    发明授权
    Process for fabricating a complementary MIS transistor 失效
    制造互补MIS晶体管的工艺

    公开(公告)号：US5532176A

    公开(公告)日：1996-07-02

    申请号：US280922

    申请日：1994-07-26

    申请人： Mitsutaka Katada ,  Hidetoshi Muramoto ,  Seizi Fuzino ,  Tadashi Hattori ,  Katsunori Abe

    发明人： Mitsutaka Katada ,  Hidetoshi Muramoto ,  Seizi Fuzino ,  Tadashi Hattori ,  Katsunori Abe

    IPC分类号： H01L21/8238 ,  H01L27/092 ,  H01L21/265

    CPC分类号： H01L21/823814 ,  H01L27/0928

    摘要： A CMIS transistor suitable for device miniaturization, elimination of degradation of operational characteristics by hot carrier effect, and elimination of decrease of threshold voltage caused by short channel effect, includes a laterally spreading N-type diffusion region having an impurity concentration level higher than P-type and N-type wells but lower than source and drain regions, such that the N-type diffusion region extends laterally into a part located immediately below an edge of an insulating gate and has a depth smaller than a depth of the source and drain regions. The device is thereby capable of increasing the width of depletion layer at the bottom of the source and drain regions while maintaining effectiveness as a punch-thorough stopper. Thereby, the junction capacitance at the source and drain regions is reduced and the operational speed of the device improved in the P-channel transistor part in the device. In the N-channel transistor part, an effective suppression of punch-through is achieved because of the small diffusion depth of the N-type diffusion region. Thereby, the decrease of threshold voltage caused by the short channel effect is effectively eliminated even when the gate length of the transistor is reduced.

    摘要翻译： 适用于器件小型化，通过热载流子效应消除操作特性劣化以及消除由短沟道效应引起的阈值电压降低的CMIS晶体管包括杂质浓度水平高于P- 型和N型阱，但低于源极和漏极区域，使得N型扩散区域横向延伸到位于绝缘栅极的边缘正下方的部分中，并且具有比源极和漏极区域的深度更小的深度 。 因此，该装置能够在源极和漏极区域的底部增加耗尽层的宽度，同时保持作为穿孔止动器的有效性。 由此，源极和漏极区域的结电容减小，器件的P沟道晶体管部分的器件的工作速度提高。 在N沟道晶体管部分中，由于N型扩散区域的扩散深度小，所以能够有效地抑制穿通。 因此，即使当晶体管的栅极长度减小时，由短沟道效应引起的阈值电压的降低也被有效地消除。

    Make-up brush
    6.
    发明授权
    Make-up brush 失效
    化妆刷

    公开(公告)号：US4568214A

    公开(公告)日：1986-02-04

    申请号：US564640

    申请日：1983-12-22

    申请人： Katsunori Abe ,  Toshio Inoue

    发明人： Katsunori Abe ,  Toshio Inoue

    IPC分类号： A45D34/04 ,  A46B11/00 ,  A46B11/04 ,  B43K8/02 ,  B43K8/08 ,  A45D34/00

    CPC分类号： B43K8/08 ,  A45D34/042 ,  A46B11/0041 ,  B43K8/02 ,  A45D2200/1018

    摘要： A make-up brush comprises a tapered hollow body made of a porous material restorable in shape when deformed, having a surface for oozing a make-up liquid, a make-up liquid guiding core covered by the hollow body and tightly inserted through a head seat fixed to one end of a liquid cylinder, a head cylinder through which the tapered hollow body extends, the head cylinder being secured to one end of a shaft cylinder to fix the tapered hollow body thereat, and a viscous substance filled in the liquid cylinder after the make-up liquid is filled in the liquid cylinder on a side of the head seat, thereby causing the make-up liquid to smoothly flow out of the make-up brush.

    摘要翻译： 一种补充刷包括一个由多孔材料制成的锥形空心体，该多孔材料在变形时可恢复其形状，具有用于渗出补充液体的表面，由该中空体覆盖的补充液导向芯，并通过头部 固定在液筒一端的座，头锥筒，锥形空心体通过该头筒延伸，头筒固定在轴筒的一端，将锥形中空体固定在其上， 在化妆液填充在头座侧面的液筒中之后，使补妆液顺利地从组合刷流出。

    Laser equipment
    7.
    发明授权
    Laser equipment 有权
    激光设备

    公开(公告)号：US07843987B2

    公开(公告)日：2010-11-30

    申请号：US12457011

    申请日：2009-05-29

    申请人： Nobuyuki Otake ,  Katsunori Abe

    发明人： Nobuyuki Otake ,  Katsunori Abe

    IPC分类号： H01S3/08

    CPC分类号： H01S3/0627 ,  H01S3/0604 ,  H01S3/08086 ,  H01S3/094084 ,  H01S3/09415 ,  H01S3/109 ,  H01S3/2383 ,  H01S3/2391 ,  H01S5/423

    摘要： Laser equipment for outputting output lights having different wavelengths includes: a substrate; an excitation light generation element for emitting excitation lights including surface emitting laser elements and disposed on the substrate; and a light converter having a pair of second reflection layers and a solid laser medium layer, both of which provide a resonator. The solid laser medium layer is capable of generating lights having different peak wavelengths by receiving the excitation lights. The light converter is disposed on an output surface of the excitation light generation element.

    摘要翻译： 用于输出具有不同波长的输出光的激光设备包括：基板; 用于发射包括表面发射激光元件并且设置在所述基板上的激发光的激发光产生元件; 以及具有一对第二反射层和固体激光介质层的光转换器，两者均提供谐振器。 固体激光介质层能够通过接收激发光来产生具有不同峰值波长的光。 光转换器设置在激发光发生元件的输出表面上。

    Laser equipment
    8.
    发明授权
    Laser equipment 有权
    激光设备

    公开(公告)号：US07564890B2

    公开(公告)日：2009-07-21

    申请号：US11641112

    申请日：2006-12-19

    申请人： Nobuyuki Otake ,  Katsunori Abe

    发明人： Nobuyuki Otake ,  Katsunori Abe

    IPC分类号： H01S3/08

    CPC分类号： H01S3/0627 ,  H01S3/0604 ,  H01S3/08086 ,  H01S3/094084 ,  H01S3/09415 ,  H01S3/109 ,  H01S3/2383 ,  H01S3/2391 ,  H01S5/423

    摘要： A laser equipment for outputting output lights having different wavelengths includes: a substrate; an excitation light generation element for emitting excitation lights including surface emitting laser elements and disposed on the substrate; and a light converter having a pair of second reflection layers and a solid laser medium layer, both of which provide a resonator. The solid laser medium layer is capable of generating lights having different peak wavelengths by receiving the excitation lights. The light converter is disposed on an output surface of the excitation light generation element.

    摘要翻译： 用于输出具有不同波长的输出光的激光设备包括：基板; 用于发射包括表面发射激光元件并且设置在所述基板上的激发光的激发光产生元件; 以及具有一对第二反射层和固体激光介质层的光转换器，两者均提供谐振器。 固体激光介质层能够通过接收激发光来产生具有不同峰值波长的光。 光转换器设置在激发光发生元件的输出表面上。

    Complementary MIS transistor and a fabrication process thereof
    10.
    发明授权
    Complementary MIS transistor and a fabrication process thereof 失效
    互补MIS晶体管及其制造工艺

    公开(公告)号：US5334870A

    公开(公告)日：1994-08-02

    申请号：US46699

    申请日：1993-04-16

    申请人： Mitsutaka Katada ,  Hidetoshi Muramoto ,  Seizi Fuzino ,  Tadashi Hattori ,  Katsunori Abe

    发明人： Mitsutaka Katada ,  Hidetoshi Muramoto ,  Seizi Fuzino ,  Tadashi Hattori ,  Katsunori Abe

    IPC分类号： H01L21/8238 ,  H01L27/092 ,  H01L27/02 ,  H01L29/10

    CPC分类号： H01L21/823814 ,  H01L27/0928 ,  Y10S257/90

    摘要： A CMIS transistor suitable for device miniaturization, elimination of degradation of operational characteristics by hot carrier effect, and elimination of decrease of threshold voltage caused by short channel effect, includes a laterally spreading N-type diffusion region having an impurity concentration level higher than P-type and N-type wells but lower than source and drain regions, such that the N-type diffusion region extends laterally into a part located immediately below an edge of an insulating gate and has a depth smaller than a depth of the source and drain regions. The device is thereby capable of increasing the width of depletion layer at the bottom of the source and drain regions while maintaining effectiveness as a punch-through stopper. Thereby, the junction capacitance at the source and drain regions is reduced and the operational speed of the device improved in the P-channel transistor part in the device. In the N-channel transistor part, an effective suppression of punch-through is achieved because of the small diffusion depth of the N-type diffusion region. Thereby, the decrease of threshold voltage caused by the short channel effect is effectively eliminated even when the gate length of the transistor is reduced.

    摘要翻译： 适用于器件小型化，通过热载流子效应消除操作特性劣化以及消除由短沟道效应引起的阈值电压降低的CMIS晶体管包括杂质浓度水平高于P- 型和N型阱，但低于源极和漏极区域，使得N型扩散区域横向延伸到位于绝缘栅极的边缘正下方的部分中，并且具有比源极和漏极区域的深度更小的深度 。 因此，该装置能够增加源极和漏极区域的底部的耗尽层的宽度，同时保持作为穿通止动器的有效性。 由此，源极和漏极区域的结电容减小，器件的P沟道晶体管部分的器件的工作速度提高。 在N沟道晶体管部分中，由于N型扩散区域的扩散深度小，所以能够有效地抑制穿通。 因此，即使当晶体管的栅极长度减小时，由短沟道效应引起的阈值电压的降低也被有效地消除。