- 专利标题： Photomask and method of manufacturing same
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申请号： US09272576申请日： 1999-03-19
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公开(公告)号： US06335125B1公开(公告)日： 2002-01-01
- 发明人: Seiji Matsuura
- 申请人： Seiji Matsuura
- 优先权： JP10-089884 19980402
- 主分类号： G03F900
- IPC分类号： G03F900
摘要：
A photomask has an isolated residual pattern formed on it, and a translucent film formed on both sides of this isolated residual pattern, with a space pattern part therebetween, the width of the translucent film being approximately equal to the line width of the isolated residual pattern.
公开/授权文献
- US20010038951A1 PHOTOMASK AND METHOD OF MANUFACTURING SAME 公开/授权日：2001-11-08
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