公开(公告)号：US6058807A

公开(公告)日：2000-05-09

申请号：US15664

申请日：1998-01-29

申请人： Yasuyoshi Fujii ,  Seiji Matsuura ,  Kazuhiro Kaneko

发明人： Yasuyoshi Fujii ,  Seiji Matsuura ,  Kazuhiro Kaneko

IPC分类号： B23B31/02 ,  B23B51/02 ,  B23P15/32 ,  B21K5/04

CPC分类号： B23B31/005 ,  B23B51/00 ,  B23B51/02 ,  B23P15/32 ,  B23B2231/0204 ,  B23B2240/28 ,  B23B2251/02 ,  B23B2251/426 ,  Y10T29/49833 ,  Y10T29/49945 ,  Y10T403/4949 ,  Y10T403/4966 ,  Y10T408/907

摘要： A method for producing cutting tools incorporated in the present invention is carried out as follows: a shank portion and a drill portion are formed separately such that the inner diameter of a hole made in the shank portion is slightly smaller than the outer diameter of the drill portion. The rear of the drill portion is forcibly inserted into the hole of the shank portion at normal temperature which is room temperature. The diameter of the inner wall of the hole is thereby enlarged, resulting in a tight fitting. After the insertion of the drill portion in the shank portion, the drill portion may be ground to form a drill edge. Before the insertion of the drill portion in the shank portion, the shank portion may be quenched under vacuum or the like, or the surface of the shank portion may be hardened by nitriding.

摘要翻译： 本发明的切削工具的制造方法如下进行：柄部和钻头部分分别形成，使得在柄部中形成的孔的内径略小于钻头的外径 一部分。 钻头部分的后部在室温的常温下被强制地插入到柄部分的孔中。 因此孔的内壁的直径变大，导致紧密配合。 在将钻头部分插入柄部之后，钻头部分可以被研磨以形成钻头边缘。 在将钻头部分插入柄部之前，柄部可以在真空等下淬火，或者可以通过氮化使柄部的表面硬化。

公开(公告)号：US6013395A

公开(公告)日：2000-01-11

申请号：US026962

申请日：1998-02-20

申请人： Seiji Matsuura

发明人： Seiji Matsuura

IPC分类号： G03F1/32 ,  G03F1/68 ,  H01L21/027 ,  G03F9/00

CPC分类号： G03F1/32

摘要： An exposure photomask which transfers a desired pattern onto a semiconductor substrate S, which has a step, has a region formed by a light-blocking film and a region formed by a translucent film. The ideal optical path difference between exposure light that passes through the translucent film and exposure light that passes through a completely transparent part and the ideal mask pattern size are determined based on the step in the semiconductor substrate, and on the desired pattern size, the pattern being formed in accordance with the ideal optical path difference and ideal mask pattern size. The thickness of the translucent film is established so that the optical path difference between exposure light that passes through the translucent film and the exposure light that passes through a completely transparent part is approximately equal to the step in the semiconductor substrate.

摘要翻译： 将期望的图案转印到具有台阶的半导体基板S上的曝光光掩模具有由遮光膜形成的区域和由半透明膜形成的区域。 基于半导体衬底中的步骤和期望的图案尺寸来确定通过透光膜的曝光光与通过完全透明部分的曝光之间的理想光程差和理想掩模图案尺寸， 根据理想的光程差和理想的掩模图案尺寸形成。 半透明膜的厚度被建立为使得通过透光膜的曝光光与通过完全透明部分的曝光光之间的光程差大致等于半导体衬底中的台阶。

公开(公告)号：US20100296069A1

公开(公告)日：2010-11-25

申请号：US12662959

申请日：2010-05-13

申请人： Seiji Matsuura

发明人： Seiji Matsuura

IPC分类号： G03B27/42

CPC分类号： G03F7/70466 ,  G03F7/70433

摘要： There is provided a pattern division method to form crowded patterns accurately on a substrate includes acquiring a mask pattern, dividing a predetermine area into a plurality of areas to prepare a division pattern in which the plurality of the areas are classified into first and second groups, generating a reduced mask pattern by reducing each of two or more patterns laid out in the object mask pattern substantially toward the center of the particular pattern, overlapping the division pattern with the reduced mask pattern and extracting the reduced patterns overlapped with the area classified as the first group of the division pattern to generate a first reduced mask pattern, and restoring the reduced patterns laid out in the first reduced mask pattern to the original size before generation of the reduced mask pattern.

摘要翻译： 提供了一种在衬底上精确地形成拥挤图案的图案划分方法，包括获取掩模图案，将预定区域划分为多个区域以制备其中多个区域被分类为第一和第二组的划分图案， 通过将基本上朝向特定图案的中心布置在对象掩模图案中的两个或更多个图案中的每一个图案重新缩小以减少掩模图案并提取与分类为 第一组划分图案，以生成第一缩小的掩模图案，以及在缩小的掩模图案的生成之前将在第一缩小的掩模图案中布置的缩小图案恢复到原始大小。

公开(公告)号：US20050142454A1

公开(公告)日：2005-06-30

申请号：US11020131

申请日：2004-12-27

申请人： Masashi Fujimoto ,  Seiji Matsuura

发明人： Masashi Fujimoto ,  Seiji Matsuura

IPC分类号： G03C5/00 ,  G03F1/36 ,  G03F1/68 ,  G03F1/70 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522

CPC分类号： G03F7/70441 ,  G03F1/36 ,  G03F7/70433

摘要： A method of designing hole patterns for arranging hole patterns on a pattern drawing of a photomask used during an exposure process in semiconductor integrated circuit manufacturing, wherein a grid is provided on the pattern drawing with a space smaller than a minimum pitch allowed by the design rule of the semiconductor integrated circuit, and the hole patterns are provided at lattice points, which are the intersections of the grid. Flexibility of hole pattern arrangement is improved and the quality of hole pattern arrangement can be easily evaluated.

摘要翻译： 一种设计用于在半导体集成电路制造中的曝光处理期间使用的光掩模的图案上布置孔图案的孔图案的方法，其中，在图案图形上设置格栅，其间距小于设计规则允许的最小间距 的半导体集成电路，并且在格栅点设置孔图案，栅格点是网格的交点。 孔图案布置的灵活性得到改善，并且可以容易地评估孔图案布置的质量。

公开(公告)号：US06335125B1

公开(公告)日：2002-01-01

申请号：US09272576

申请日：1999-03-19

申请人： Seiji Matsuura

发明人： Seiji Matsuura

IPC分类号： G03F900

摘要： A photomask has an isolated residual pattern formed on it, and a translucent film formed on both sides of this isolated residual pattern, with a space pattern part therebetween, the width of the translucent film being approximately equal to the line width of the isolated residual pattern.

公开(公告)号：US6160623A

公开(公告)日：2000-12-12

申请号：US490475

申请日：2000-01-24

申请人： Takayuki Uchiyama ,  Seiji Matsuura

发明人： Takayuki Uchiyama ,  Seiji Matsuura

IPC分类号： H01L21/027 ,  G01M11/02 ,  G03F7/20 ,  G01B11/00

CPC分类号： G03F7/706

摘要： An aberration of a projection exposing apparatus system is measured from the difference between widths of both-end lines even in a fine pattern having a pattern line width of less than 0.2 .mu.m. A resist film on a substrate is exposed to light, using a mask having a line-and-space (LS) pattern. This exposure is repeated plural times at plural exposures, so as to obtain, at the respective exposures, the differences between the widths of the both-end lines of the line-and-space pattern. The difference between the widths of the both-end lines at a standard (optimal) exposure is estimated from the relationship between the differences between the widths of the both-end lines and the exposures, so as to obtain an aberration at the standard exposure.

摘要翻译： 投影曝光装置系统的像差即使在图案线宽度小于0.2μm的精细图案中也从两端宽度的差异测量。 使用具有线间距（LS）图案的掩模将基板上的抗蚀剂膜曝光。 这种曝光在多次曝光中重复多次，以便在相应的曝光下获得线间距图案的两端线宽度之间的差异。 根据两端宽度和曝光之间的差异之间的关系来估计标准（最佳）曝光下的两端线的宽度之间的差异，以便在标准曝光下获得像差。

公开(公告)号：US06037411A

公开(公告)日：2000-03-14

申请号：US452064

申请日：1995-05-26

申请人： Kunihiko Tokura ,  Masaru Uryu ,  Seiji Matsuura

发明人： Kunihiko Tokura ,  Masaru Uryu ,  Seiji Matsuura

IPC分类号： H04R7/02 ,  C08G59/02 ,  C08G59/12 ,  C08G59/42 ,  C08J5/04 ,  C08L63/00 ,  C08K7/02 ,  C08K7/14 ,  G10K13/00

CPC分类号： C08G59/42 ,  C08G59/02 ,  C08G59/12 ,  C08J5/04 ,  C08L63/00 ,  C08J2363/00

摘要： This invention provides an acoustic vibrational material containing various fibers as the reinforcement material and having the epoxy resin as the matrix resin, wherein the epoxy resin is modified by a polybutadiene base elastomer containing not less than 90 mole percent of 1,2-linked units. The epoxy resin modified with the above polybutadiene elastomer exhibits a maximum value of loss coefficient at the temperature region near the room temperature. Thus compatibility between large internal loss and high elastic modulus is achieved.

摘要翻译： 本发明提供一种包含各种纤维作为增强材料并具有环氧树脂作为基质树脂的声振动材料，其中环氧树脂由含有不小于90摩尔％的1,2-连接单元的聚丁二烯基弹性体改性。 用上述聚丁二烯弹性体改性的环氧树脂在室温附近的温度区域具有最大的损失系数值。 因此实现了大的内部损耗和高弹性模量之间的兼容性。

公开(公告)号：US07572558B2

公开(公告)日：2009-08-11

申请号：US11714819

申请日：2007-03-07

申请人： Seiji Matsuura

发明人： Seiji Matsuura

IPC分类号： G03F1/00

CPC分类号： G03F7/70441 ,  G03F1/36 ,  G03F7/70125 ,  G03F7/70433

摘要： A photomask is to be used for exposure of a semiconductor wafer with the dipole illumination light, and includes a main opening, a first assist opening, a second assist opening, a third assist opening and a fourth assist opening. Each of the assist openings is located so that the central point thereof is deviated from both of a first straight line parallel to a first direction and passing the central point of the main opening, and a second straight line parallel to a second direction and passing the central point of the main opening. Here, the first direction is the direction among in-plane directions of the photomask that is parallel to an alignment direction of an effective light source distribution of the dipole illumination light. Also, the second direction is the direction among in-plane directions of the photomask that is perpendicular to the alignment direction.

摘要翻译： 光掩模用于暴露具有偶极照明光的半导体晶片，并且包括主开口，第一辅助开口，第二辅助开口，第三辅助开口和第四辅助开口。 每个辅助开口的位置使得其中心点偏离平行于第一方向的第一直线并通过主开口的中心点，并且平行于第二方向的第二直线通过 主要开口的中心点。 这里，第一方向是平行于偶极照明光的有效光源分布的取向方向的光掩模的面内方向的方向。 此外，第二方向是光掩模的垂直于取向方向的面内方向之间的方向。

公开(公告)号：US07537864B2

公开(公告)日：2009-05-26

申请号：US11020131

申请日：2004-12-27

申请人： Masashi Fujimoto ,  Seiji Matsuura

发明人： Masashi Fujimoto ,  Seiji Matsuura

IPC分类号： G03F1/00 ,  G03F1/14 ,  G06F17/50

CPC分类号： G03F7/70441 ,  G03F1/36 ,  G03F7/70433

摘要： A method of designing hole patterns for arranging hole patterns on a pattern drawing of a photomask used during an exposure process in semiconductor integrated circuit manufacturing, wherein a grid is provided on the pattern drawing with a space smaller than a minimum pitch allowed by the design rule of the semiconductor integrated circuit, and the hole patterns are provided at lattice points, which are the intersections of the grid. Flexibility of hole pattern arrangement is improved and the quality of hole pattern arrangement can be easily evaluated.

摘要翻译： 一种设计用于在半导体集成电路制造中的曝光处理期间使用的光掩模的图案上布置孔图案的孔图案的方法，其中，在图案图形上设置格栅，其间距小于设计规则允许的最小间距 的半导体集成电路，并且在格栅点设置孔图案，栅格点是网格的交点。 孔图案布置的灵活性得到改善，并且可以容易地评估孔图案布置的质量。

公开(公告)号：US20010038951A1

公开(公告)日：2001-11-08

申请号：US09272576

申请日：1999-03-19

申请人： Seiji Matsuura

发明人： SEIJI MATSUURA

IPC分类号： G03F009/00 ,  G03C005/00

CPC分类号： G03F7/70433 ,  G03F1/36

摘要： A photomask has an isolated residual pattern formed on it, and a translucent film formed on both sides of this isolated residual pattern, with a space pattern part therebetween, the width of the translucent film being approximately equal to the line width of the isolated residual pattern.

摘要翻译： 光掩模在其上形成有分离的残留图案，并且在隔离的残留图案的两侧形成有半透明膜，其间具有空间图案部分，半透膜的宽度近似等于隔离残留图案的线宽 。