发明授权
- 专利标题： Use of RTA furnace for photoresist baking
- 专利标题（中）： 使用RTA炉进行光刻胶烘烤
-
申请号： US09564408申请日： 2000-05-01
-
公开(公告)号： US06335152B1公开(公告)日： 2002-01-01
- 发明人: Ramkumar Subramanian , Bharath Rangarajan , Michael K. Templeton , Bhanwar Singh
- 申请人： Ramkumar Subramanian , Bharath Rangarajan , Michael K. Templeton , Bhanwar Singh
- 主分类号： G03F738
- IPC分类号： G03F738
摘要：
In one embodiment, the present invention relates to a method of processing an irradiated photoresist involving the steps of placing a substrate having the irradiated photoresist thereon at a first temperature in a rapid thermal anneal furnace; heating the substrate having the irradiated photoresist thereon to a second temperature within about 0.1 seconds to about 10 seconds; cooling the substrate having the irradiated photoresist thereon to a third temperature in a rapid thermal annealing furnace within about 0.1 seconds to about 10 seconds; and developing the irradiated photoresist, wherein the second temperature is higher than the first temperature and the third temperature. In another embodiment, the present invention relates to a system of processing a photoresist, containing a source of actinic radiation and a mask for selectively irradiating a photoresist; a rapid thermal annealing furnace for rapidly heating and rapidly cooling a selectively irradiated photoresist, wherein the rapid heating and rapid cooling are independently conducted within about 0.1 seconds to about 10 seconds; and a developer for developing a rapid thermal annealing furnace heated and selectively irradiated photoresist into a patterned photoresist.
信息查询
