发明授权
- 专利标题： Method for fabricating a group III nitride semiconductor device
- 专利标题（中）： 制造III族氮化物半导体器件的方法
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申请号： US09565025申请日： 2000-05-05
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公开(公告)号： US06335218B1公开(公告)日： 2002-01-01
- 发明人: Hiroyuki Ota , Mamoru Miyachi , Yoshinori Kimura
- 申请人： Hiroyuki Ota , Mamoru Miyachi , Yoshinori Kimura
- 优先权： JP11-128768 19990510
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
A group III nitride semiconductor device producing method is constructed by: a step of forming a first crystal layer made of a group III nitride semiconductor (AlxGa1−x)1−y.InyN (0≦×≦1, 0≦y≦1) doped with a group II impurity element; a step of a second crystal layer made of a group III nitride semiconductor AlzGa1−zN (0.7≦z≦1) onto the first crystal layer; and a step of removing at least a part of the second crystal layer by etching after the formation of the first and second crystal layers.
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