Invention Grant
- Patent Title: Photoelectric conversion device
- Patent Title (中): 光电转换装置
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Application No.: US09407298Application Date: 1999-09-29
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Publication No.: US06342920B2Publication Date: 2002-01-29
- Inventor: Isamu Ueno
- Applicant: Isamu Ueno
- Priority: JP8-39614 19960227
- Main IPC: H04N5335
- IPC: H04N5335

Abstract:
This invention provides an element having a skimming charge transfer function in an X-Y address type photoelectric conversion device using, e.g., a CMOS sensor, and a photoelectric conversion device, which accumulates photoelectric signal charges produced by a photoelectric conversion element in a control electrode (gate) of a MOS transistor so as to obtain a signal with a high S/N ratio by removing signal components produced by background radiation without using any CCD as an accumulation means of skimming charges, has a skimming electrode for transferring skimming charges of those produced by the photoelectric conversion element, an n+-type region for accumulating the transferred skimming charges, a MOS transistor for reading out potential changes caused by the skimming charges, and a circuit for automatically controlling the amount of skimming charges to be transferred.
Public/Granted literature
- US20010040634A1 PHOTOELECTRIC CONVERSION DEVICE Public/Granted day:2001-11-15
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