公开(公告)号：US08883526B2

公开(公告)日：2014-11-11

申请号：US12960701

申请日：2010-12-06

Applicant: Akira Okita ,  Toru Koizumi ,  Isamu Ueno ,  Katsuhito Sakurai

Inventor： Akira Okita ,  Toru Koizumi ,  Isamu Ueno ,  Katsuhito Sakurai

IPC: H04N5/335 ,  H04N3/14 ,  H04N5/235 ,  H01L27/146

CPC classification number: H04N3/155 ,  H01L27/14603 ,  H04N5/235 ,  H04N5/2355 ,  H04N5/35572 ,  H04N5/3591 ,  H04N5/378

Abstract: An image pickup device, wherein a part of the carriers overflowing from the photoelectric conversion unit for a period of photoelectrically generating and accumulating the carriers may be flowed into the floating diffusion region, and a pixel signal generating unit generating a pixel signal according to the carriers stored in the photoelectric conversion unit and the carriers having overflowed into the floating diffusion region, is provided. The expansion of a dynamic range and the improvement of an image quality can be provided by controlling a ratio of the carriers flowing into the floating diffusion region to the carriers overflowing from such a photoelectric conversion unit at high accuracy.

Abstract translation: 一种图像拾取装置，其中从光电转换单元溢出一段光电产生和累积载流子的载流子的一部分可以流入浮动扩散区域，并且像素信号生成单元根据载流子生成像素信号 存储在光电转换单元中并且已经溢出到浮动扩散区域中的载流子。 动态范围的扩大和图像质量的提高可以通过控制流入浮动扩散区域的载流子与从这种光电转换单元溢出的载流子的比例高精度地提供。

公开(公告)号：US08089545B2

公开(公告)日：2012-01-03

申请号：US12431831

申请日：2009-04-29

Applicant: Toru Koizumi ,  Akira Okita ,  Katsuhito Sakurai ,  Isamu Ueno

Inventor： Toru Koizumi ,  Akira Okita ,  Katsuhito Sakurai ,  Isamu Ueno

IPC: H04N5/335

CPC classification number: H04N5/369 ,  H04N5/3559 ,  H04N5/3592 ,  H04N5/37452

Abstract: A solid-state image pickup device having a pixel includes a photoelectric conversion unit generating and accumulating charge by photoelectric conversion; a charge holding unit being shielded from light, and being adaptable to accumulate a part of charge spilling from the photoelectric conversion unit in a period during which the photoelectric conversion unit generates and accumulates charge; an amplifying unit (SF-MOS) amplifying charge; a first transfer unit (Tx-MOS) transferring the charge accumulated in the photoelectric conversion unit to the amplifying unit; and a second transfer unit (Ty-MOS) transferring the charge accumulated in the first charge holding unit to the amplifying unit. A part of charge spilling from the photoelectric conversion unit is caused to flow into the charge holding unit and thereby extend the dynamic range, and at the same time, improve image quality.

Abstract translation: 具有像素的固体摄像装置包括通过光电转换产生并积累电荷的光电转换单元; 电荷保持单元被遮光，并且适于在光电转换单元产生并累积电荷的时段期间累积从光电转换单元溢出的电荷的一部分; 放大单元（SF-MOS）放大电荷; 将累积在光电转换单元中的电荷传送到放大单元的第一传送单元（Tx-MOS） 以及将在第一电荷保持单元中累积的电荷转移到放大单元的第二转印单元（Ty-MOS）。 使从光电转换单元溢出的电荷的一部分流入电荷保持单元，从而延长动态范围，同时提高图像质量。

公开(公告)号：US20090213260A1

公开(公告)日：2009-08-27

申请号：US12431831

申请日：2009-04-29

Applicant: TORU KOIZUMI ,  Akira Okita ,  Katsuhito Sakurai ,  Isamu Ueno

Inventor： TORU KOIZUMI ,  Akira Okita ,  Katsuhito Sakurai ,  Isamu Ueno

IPC: H04N3/14

CPC classification number: H04N5/369 ,  H04N5/3559 ,  H04N5/3592 ,  H04N5/37452

Abstract: An object of the invention is to cause a part of charge spilling from a photoelectric conversion unit to flow into a charge holding unit and thereby extend dynamic range and at the same time improve image quality. There is provided a solid-state image pickup device having a pixel including: a photoelectric conversion unit generating and accumulating charge by means of photoelectric conversion; a first charge holding unit being shielded from light, and being adaptable to accumulate a part of charge spilling from the photoelectric conversion unit in a period during which the photoelectric conversion unit generates and accumulates charge; an amplifying unit (SF-MOS) amplifying charge; a first transfer unit (Tx-MOS) transferring the charge accumulated in the photoelectric conversion unit to the amplifying unit; and a second transfer unit (Ty-MOS) transferring the charge accumulated in the first charge holding unit to the amplifying unit.

Abstract translation: 本发明的目的是使光电转换单元的一部分电荷溢出流入电荷保持单元，从而延长动态范围，同时提高图像质量。 提供一种具有像素的固体摄像装置，该像素包括：光电转换单元，通过光电转换产生和累积电荷; 第一电荷保持单元被遮光，并且适于在光电转换单元产生并累积电荷的时段期间累积从光电转换单元溢出的电荷的一部分; 放大单元（SF-MOS）放大电荷; 将累积在光电转换单元中的电荷传送到放大单元的第一传送单元（Tx-MOS） 以及将在第一电荷保持单元中累积的电荷转移到放大单元的第二转印单元（Ty-MOS）。

公开(公告)号：US07274394B2

公开(公告)日：2007-09-25

申请号：US10622540

申请日：2003-07-21

Applicant: Toru Koizumi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Tetsunobu Kochi ,  Katsuhito Sakurai ,  Hiroki Hiyama

Inventor： Toru Koizumi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Tetsunobu Kochi ,  Katsuhito Sakurai ,  Hiroki Hiyama

IPC: H04N3/14 ,  H01L21/336 ,  H01L31/062 ,  H01L27/00

CPC classification number: H01L27/14806 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/035281 ,  Y02E10/50

Abstract: A method of manufacturing a MOS-type solid-state image pickup device having a photoelectric conversion unit, a transfer MOS transistor, a gate electrode disposed on an insulating film and a semiconductor substrate on which the photoelectric conversion unit and the transfer MOS transistor are disposed, includes a first step of forming a second semiconductor region by ion implanting an impurity of a second conductivity type at a first angle with a first energy using the gate electrode as a mask, and a second step of forming a fifth semiconductor region by ion implanting an impurity of the second conductivity type at a second angle with a second energy using the gate electrode as a mask. A fourth semiconductor region is formed by ion implanting an impurity of the second conductivity type. The second energy is smaller than the first energy, and the first and second angles are respectively angles to a direction normal to a surface of the semiconductor substrate, with the second angle being larger than the first angle, and the first and third steps being performed separately.

Abstract translation: 一种制造具有光电转换单元，转移MOS晶体管，设置在绝缘膜上的栅极电极和设置有光电转换单元和转移MOS晶体管的半导体衬底的MOS型固体摄像器件的方法 包括通过使用栅电极作为掩模以第一角度以第一角度离子注入第二导电类型的杂质形成第二半导体区域的第一步骤，以及通过离子注入形成第五半导体区域的第二步骤 使用栅电极作为掩模，以第二能量以第二角度的第二导电类型的杂质。 通过离子注入第二导电类型的杂质形成第四半导体区域。 第二能量小于第一能量，并且第一和第二角度分别是与垂直于半导体衬底的表面的方向的角度，其中第二角度大于第一角度，并且执行第一和第三步骤 分别。

公开(公告)号：US07129985B1

公开(公告)日：2006-10-31

申请号：US09444675

申请日：1999-11-22

Applicant: Toru Koizumi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Katsuhisa Ogawa ,  Tetsunobu Kochi ,  Katsuhito Sakurai ,  Toshiaki Endo ,  Hiroki Hiyama

Inventor： Toru Koizumi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Katsuhisa Ogawa ,  Tetsunobu Kochi ,  Katsuhito Sakurai ,  Toshiaki Endo ,  Hiroki Hiyama

IPC: H04N5/225 ,  H04N5/335

CPC classification number: H04N5/335

Abstract: A sensor integrated on a single semiconductor substrate comprises a sensor block including a pixel unit including a plurality of pixels each including a light-receiving element and scanning units for selecting a pixel of the pixel unit, and a signal processing block for processing a signal output from the sensor block. To reduce noise and power consumption, the power supply voltage or the amplitude or high level of a clock signal used in the sensor block is higher than the power supply voltage of the signal processing block.

Abstract translation: 集成在单个半导体衬底上的传感器包括传感器块，其包括像素单元，该像素单元包括多个像素，每个像素包括光接收元件和用于选择像素单元的像素的扫描单元，以及用于处理信号输出的信号处理块 从传感器块。 为了降低噪声和功耗，传感器模块中使用的时钟信号的电源电压或振幅或高电平高于信号处理模块的电源电压。

公开(公告)号：US20060158539A1

公开(公告)日：2006-07-20

申请号：US11332734

申请日：2006-01-13

Applicant: Toru Koizumi ,  Akira Okita ,  Katsuhito Sakurai ,  Isamu Ueno

Inventor： Toru Koizumi ,  Akira Okita ,  Katsuhito Sakurai ,  Isamu Ueno

IPC: H04N5/335

CPC classification number: H04N5/369 ,  H04N5/3559 ,  H04N5/3592 ,  H04N5/37452

Abstract: An object of the invention is to cause a part of charge spilling from a photoelectric conversion unit to flow into a charge holding unit and thereby extend dynamic range and at the same time improve image quality. There is provided a solid-state image pickup device having a pixel including: a photoelectric conversion unit generating and accumulating charge by means of photoelectric conversion; a first charge holding unit being shielded from light, and being adaptable to accumulate a part of charge spilling from the photoelectric conversion unit in a period during which the photoelectric conversion unit generates and accumulates charge; an amplifying unit (SF-MOS) amplifying charge; a first transfer unit (Tx-MOS) transferring the charge accumulated in the photoelectric conversion unit to the amplifying unit; and a second transfer unit (Ty-MOS) transferring the charge accumulated in the first charge holding unit to the amplifying unit.

公开(公告)号：US06657664B2

公开(公告)日：2003-12-02

申请号：US08595173

申请日：1996-02-01

Applicant: Isamu Ueno

Inventor： Isamu Ueno

IPC: H04N314

CPC classification number: H04N5/3742 ,  H04N5/3692 ,  H04N5/374

Abstract: A solid-state image pickup device is provided with plural blocks, each comprising at least two pixels, allowing reading of signals of pixel blocks at high speed without signal loss. The output signals of the blocks are connected in common, respectively through block buffers, thereby providing the maximum or minimum value of the pixels. Each block buffer has an input at the base of a self-biased transistor and an output in an emitter follower circuit. There also are provided first photoelectric conversion elements for reading out the photoelectric conversion charges of respective pixels and second photoelectric conversion elements for reading out the photoelectric conversion charges respectively in blocks, each composed of plural pixels, and the outputs of the second photoelectric conversion elements are connected in common to a common line through maximum output circuits.

Abstract translation: 固态图像拾取装置设置有多个块，每个块包括至少两个像素，允许高速读取像素块的信号而没有信号丢失。 块的输出信号分别通过块缓冲器共同连接，从而提供像素的最大值或最小值。 每个块缓冲器具有在自偏置晶体管的基极处的输入和在射极跟随器电路中的输出。 还提供了用于读出各像素的光电转换电荷的第一光电转换元件和用于分别读出由多个像素组成的块的光电转换电荷的第二光电转换元件，并且第二光电转换元件的输出为 通过最大输出电路将共同连接到公共线路。

公开(公告)号：US06342920B2

公开(公告)日：2002-01-29

申请号：US09407298

申请日：1999-09-29

Applicant: Isamu Ueno

Inventor： Isamu Ueno

IPC: H04N5335

CPC classification number: H04N5/37452 ,  H04N5/359 ,  H04N5/3592 ,  H04N5/374

Abstract: This invention provides an element having a skimming charge transfer function in an X-Y address type photoelectric conversion device using, e.g., a CMOS sensor, and a photoelectric conversion device, which accumulates photoelectric signal charges produced by a photoelectric conversion element in a control electrode (gate) of a MOS transistor so as to obtain a signal with a high S/N ratio by removing signal components produced by background radiation without using any CCD as an accumulation means of skimming charges, has a skimming electrode for transferring skimming charges of those produced by the photoelectric conversion element, an n+-type region for accumulating the transferred skimming charges, a MOS transistor for reading out potential changes caused by the skimming charges, and a circuit for automatically controlling the amount of skimming charges to be transferred.

Abstract translation: 本发明提供了一种在例如CMOS传感器的XY地址型光电转换装置中具有撇取电荷转移功能的元件和在控制电极（栅极）中积聚由光电转换元件产生的光电信号电荷的光电转换装置 ），以便通过除去由背景辐射产生的信号分量而不使用任何CCD作为撇取电荷的累积装置来获得具有高S / N比的信号，具有用于传送由撇号电极产生的撇去电荷的撇渣电极 光电转换元件，用于累积转移的撇号电荷的n +型区域，用于读出由撇取电荷引起的电位变化的MOS晶体管，以及用于自动控制要转移的撇取电荷量的电路。

公开(公告)号：US5663555A

公开(公告)日：1997-09-02

申请号：US674461

申请日：1996-07-02

Applicant: Mamoru Miyawaki ,  Isamu Ueno

Inventor： Mamoru Miyawaki ,  Isamu Ueno

IPC: H04N1/028 ,  H04N5/335 ,  H04N5/347 ,  H04N5/351 ,  H04N5/359 ,  H04N5/369 ,  H04N5/372 ,  H04N5/3745 ,  H04N5/378 ,  H01J40/14

CPC classification number: H04N3/1512 ,  H04N3/155

Abstract: An image information processing apparatus comprising a parallel connection circuit for parallelly connecting a plurality of photo-electric conversion elements, a combined signal read circuit for reading out a combined signal from the plurality of parallelly connected photo-electric conversion elements, an individual signal read circuit for reading out an independent individual signal of each of the plurality of photo-electric conversion elements, a photometry circuit connected to the combined signal read circuit and a distance measurement circuit connected to the individual signal read circuit.

Abstract translation: 一种图像信息处理装置，包括用于并联连接多个光电转换元件的并联连接电路，用于从多个并联连接的光电转换元件读出组合信号的组合信号读取电路，单独的信号读取电路 用于读出多个光电转换元件中的每一个的独立信号，连接到组合信号读取电路的测光电路和连接到各个信号读取电路的距离测量电路。

公开(公告)号：US5162912A

公开(公告)日：1992-11-10

申请号：US508893

申请日：1990-04-05

Applicant: Isamu Ueno ,  Seiji Hashimoto ,  Masami Takeda

Inventor： Isamu Ueno ,  Seiji Hashimoto ,  Masami Takeda

IPC: H04N5/357 ,  H04N5/361 ,  H04N5/365 ,  H04N5/369 ,  H04N5/378

CPC classification number: H04N5/3575 ,  H04N5/365 ,  H04N5/3692 ,  H04N5/378

Abstract: A photoelectric conversion apparatus includes a photoelectric conversion element, a first storage unit for storing a signal from the photoelectric conversion element, a second storage unit for storing noise from the photoelectric conversion element, a buffer unit for buffering output signals from the first and second storage units, a capacitor unit connected to the buffer unit, and a resetting unit connected to both sides of the capacitor unit.