发明授权
- 专利标题： Low cost silicon substrate with impurity gettering and latch up protection and method of manufacture
- 专利标题（中）： 低成本硅衬底，具有杂质吸气和闭锁保护及其制造方法
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申请号： US09281729申请日： 1999-03-30
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公开(公告)号： US06346460B1公开(公告)日： 2002-02-12
- 发明人: Oleg V. Kononchuk , Sergei Koveshnikov
- 申请人： Oleg V. Kononchuk , Sergei Koveshnikov
- 主分类号： H01L21322
- IPC分类号： H01L21322
摘要：
A low cost method of manufacturing a silicon substrate having both impurity gettering and protection against CMOS latch up. The method includes performing a low energy implant of a selected acceptor ion to form a low resistivity buried layer closely adjacent the front surface of a silicon wafer. A low energy silicon implant is also performed to create a plurality of gettering sites closely adjacent the front surface. Subsequently, an epitaxial silicon layer is grown on the front surface.
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