公开(公告)号：US06346460B1

公开(公告)日：2002-02-12

申请号：US09281729

申请日：1999-03-30

申请人： Oleg V. Kononchuk ,  Sergei Koveshnikov

发明人： Oleg V. Kononchuk ,  Sergei Koveshnikov

IPC分类号： H01L21322

CPC分类号： H01L21/2205 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/3221 ,  H01L21/74

摘要： A low cost method of manufacturing a silicon substrate having both impurity gettering and protection against CMOS latch up. The method includes performing a low energy implant of a selected acceptor ion to form a low resistivity buried layer closely adjacent the front surface of a silicon wafer. A low energy silicon implant is also performed to create a plurality of gettering sites closely adjacent the front surface. Subsequently, an epitaxial silicon layer is grown on the front surface.

摘要翻译： 制造具有杂质吸杂和防止CMOS闩锁的硅衬底的低成本方法。 该方法包括执行所选择的受主离子的低能量注入以形成与硅晶片的前表面紧密相邻的低电阻率掩埋层。 还执行低能量硅植入物以产生紧邻前表面的多个吸气位置。 随后，在前表面上生长外延硅层。

公开(公告)号：US20060073424A1

公开(公告)日：2006-04-06

申请号：US10955601

申请日：2004-09-29

申请人： Sergei Koveshnikov ,  Juan Dominguez ,  Kyle Flanigan ,  Ernisse Putna

发明人： Sergei Koveshnikov ,  Juan Dominguez ,  Kyle Flanigan ,  Ernisse Putna

IPC分类号： G03F7/00

CPC分类号： G03F7/091 ,  Y10S438/95 ,  Y10S438/964

摘要： Systems and techniques involving optical coatings for semiconductor devices. An implementation includes a substantially isotropic, heterogeneous anti-reflective coating having a substantially equal thickness normal to any portion of a substrate independent of the orientation of the portion.

摘要翻译： 涉及半导体器件光学涂层的系统和技术。 实施方案包括基本上各向同性的多相抗反射涂层，其具有与基底的取向无关的垂直于基底的任何部分的基本相等的厚度。

公开(公告)号：US06339011B1

公开(公告)日：2002-01-15

申请号：US09799856

申请日：2001-03-05

申请人： Fernando Gonzalez ,  Sergei Koveshnikov

发明人： Fernando Gonzalez ,  Sergei Koveshnikov

IPC分类号： H01L21322

CPC分类号： H01L21/3221

摘要： In one implementation, A method of forming semiconductive material active area having a proximity gettering region received therein includes providing a substrate comprising bulk semiconductive material. A proximity gettering region is formed within the bulk semiconductive material within a desired active area by ion implanting at least one impurity into the bulk semiconductive material. After forming the proximity gettering region, thickness of the bulk semiconductive material is increased in a blanket manner at least within the desired active area. In one implementation, a method of processing a monocrystalline silicon substrate includes forming a proximity gettering region within monocrystalline silicon of a monocrystalline silicon substrate. After forming the proximity gettering region, epitaxial monocrystalline silicon is formed on the substrate monocrystalline silicon to blanketly increase its thickness at least over the proximity gettering region.

摘要翻译： 在一个实施方案中，形成具有接收在其中的接近吸气区的半导体材料有源区的方法包括提供包括本体半导体材料的衬底。 通过将至少一种杂质离子注入到本体半导体材料中，在所需活性区域内的本体半导体材料内形成接近吸气区域。 在形成接近吸气区域之后，至少在所需的有效区域内以整体方式增加本体半导体材料的厚度。 在一个实施方案中，处理单晶硅衬底的方法包括在单晶硅衬底的单晶硅内形成接近吸气区。 在形成接近吸气区域之后，在衬底单晶硅上形成外延单晶硅，以至少在接近吸气区域上覆盖其厚度。

公开(公告)号：US20060029879A1

公开(公告)日：2006-02-09

申请号：US10914605

申请日：2004-08-09

申请人： Kyle Flanigan ,  Juan Dominguez ,  Sergei Koveshnikov ,  Ernisse Putna

发明人： Kyle Flanigan ,  Juan Dominguez ,  Sergei Koveshnikov ,  Ernisse Putna

IPC分类号： G03C5/18

CPC分类号： H01L21/76808

摘要： An optically tuned SLAM (Sacrificial Light-Absorbing Material) may be used in a via-first dual damascene patterning process to facilitate removal of the SLAM. The monomers used to produce the optically tuned SLAM may be modified to place an optically sensitive structure in the backbone of the SLAM polymer. The wafer may be exposed to a wavelength to which the SLAM is tuned prior to etching and/or ashing steps to degrade the optically tuned SLAM and facilitate removal.