发明授权
- 专利标题： Method to remove copper contamination by using downstream oxygen and chelating agent plasma
- 专利标题（中）： 使用下游氧和螯合剂等离子体去除铜污染的方法
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申请号： US09839962申请日： 2001-04-23
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公开(公告)号： US06350689B1公开(公告)日： 2002-02-26
- 发明人: Paul Ho , Simon Chooi , Yakub Aliyu , Mei Sheng Zhou , John Sudijono , Subhash Gupta , Sudipto Ranendra Roy , Yi Xu
- 申请人： Paul Ho , Simon Chooi , Yakub Aliyu , Mei Sheng Zhou , John Sudijono , Subhash Gupta , Sudipto Ranendra Roy , Yi Xu
- 主分类号： H01L2144
- IPC分类号： H01L2144
摘要：
A method of removing copper contamination from a semiconductor wafer, comprising the following steps. A semiconductor wafer having copper contamination thereon is provided. An oxidizing radical containing downstream plasma is provided from a first source (alternatively halogen (F2, Cl2, or Br2) may be used as on oxidizing agent). A vaporized chelating agent is provided from a second source. The oxidizing radical containing downstream plasma and vaporized chelating agent are mixed to form an oxidizing radical containing downstream plasma/vaporized chelating agent mixture. The mixture is directed to the copper contamination so that the mixture reacts with the copper contamination to form a volatile product. The volatile product is removed from the proximity of the wafer.