发明授权
US06350694B1 Reducing CMP scratch, dishing and erosion by post CMP etch back method for low-k materials
有权
对于低k材料，通过后CMP回蚀法减少CMP划痕，凹陷和侵蚀
- 专利标题： Reducing CMP scratch, dishing and erosion by post CMP etch back method for low-k materials
- 专利标题（中）： 对于低k材料，通过后CMP回蚀法减少CMP划痕，凹陷和侵蚀
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申请号： US09814038申请日： 2001-03-22
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公开(公告)号： US06350694B1公开(公告)日： 2002-02-26
- 发明人: Weng Chang , Tien-I Bao , Syun-Ming Jang
- 申请人： Weng Chang , Tien-I Bao , Syun-Ming Jang
- 优先权： JP2000-304520 20001004
- 主分类号： H01L21302
- IPC分类号： H01L21302
摘要：
A new plasma etch back is provided that is applied to the surface of a low-k dielectric after the process of CMP of a copper surface has been completed. The copper surface is the surface of interconnect metal, the interconnect metal is embedded in the layer of low-k dielectric.
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