发明授权
US06351254B2 Junction-based field emission structure for field emission display
失效
用于场发射显示的基于结的场发射结构
- 专利标题: Junction-based field emission structure for field emission display
- 专利标题(中): 用于场发射显示的基于结的场发射结构
-
申请号: US09110166申请日: 1998-07-06
-
公开(公告)号: US06351254B2公开(公告)日: 2002-02-26
- 发明人: Long N. Dinh , Mehdi Balooch , William McLean, II , Marcus A. Schildbach
- 申请人: Long N. Dinh , Mehdi Balooch , William McLean, II , Marcus A. Schildbach
- 主分类号: G09G320
- IPC分类号: G09G320
摘要:
A junction-based field emission display, wherein the junctions are formed by depositing a semiconducting or dielectric, low work function, negative electron affinity (NEA) silicon-based compound film (SBCF) onto a metal or n-type semiconductor substrate. The SBCF can be doped to become a p-type semiconductor. A small forward bias voltage is applied across the junction so that electron transport is from the substrate into the SBCF region. Upon entering into this NEA region, many electrons are released into the vacuum level above the SBCF surface and accelerated toward a positively biased phosphor screen anode, hence lighting up the phosphor screen for display. To turn off, simply switch off the applied potential across the SBCF/substrate. May be used for field emission flat panel displays.
公开/授权文献
信息查询