METHODS FOR DAMAGE ETCH AND TEXTURING OF SILICON SINGLE CRYSTAL SUBSTRATES
    1.
    发明申请
    METHODS FOR DAMAGE ETCH AND TEXTURING OF SILICON SINGLE CRYSTAL SUBSTRATES 有权
    硅单晶基板的损伤蚀刻和纹理化方法

    公开(公告)号:US20100197144A1

    公开(公告)日:2010-08-05

    申请号:US12366141

    申请日:2009-02-05

    IPC分类号: H01L21/306

    CPC分类号: H01L31/02363 Y02E10/50

    摘要: Methods for performing damage etch and texturing of single crystal silicon substrates, particularly for use as solar cells or photovoltaic cells. Damage etch with a TMAH solution followed by texturing using solution of KOH or NaOH mixed with IPA is particularly advantageous. The substitution of some of the IPA with ethylene glycol further improves results. Also disclosed is a process that combines both damage etch and texturing etch into a single step.

    摘要翻译: 用于执行单晶硅衬底的损伤蚀刻和纹理化的方法,特别是用作太阳能电池或光伏电池的方法。 使用TMAH溶液进行损伤蚀刻,然后使用与IPA混合的KOH或NaOH溶液进行纹理化是特别有利的。 一些IPA与乙二醇的取代进一步提高了结果。 还公开了将损伤蚀刻和纹理蚀刻两者结合到单个步骤中的过程。

    Junction-based field emission structure for field emission display
    2.
    发明授权
    Junction-based field emission structure for field emission display 失效
    用于场发射显示的基于结的场发射结构

    公开(公告)号:US06351254B2

    公开(公告)日:2002-02-26

    申请号:US09110166

    申请日:1998-07-06

    IPC分类号: G09G320

    CPC分类号: H01J1/308

    摘要: A junction-based field emission display, wherein the junctions are formed by depositing a semiconducting or dielectric, low work function, negative electron affinity (NEA) silicon-based compound film (SBCF) onto a metal or n-type semiconductor substrate. The SBCF can be doped to become a p-type semiconductor. A small forward bias voltage is applied across the junction so that electron transport is from the substrate into the SBCF region. Upon entering into this NEA region, many electrons are released into the vacuum level above the SBCF surface and accelerated toward a positively biased phosphor screen anode, hence lighting up the phosphor screen for display. To turn off, simply switch off the applied potential across the SBCF/substrate. May be used for field emission flat panel displays.

    摘要翻译: 一种基于结的场致发射显示器,其中通过将半导体或电介质,低功函数,负电子亲和力(NEA)硅基化合物膜(SBCF)沉积到金属或n型半导体衬底上而形成结。 可以将SBCF掺杂成为p型半导体。 在整个结上施加小的正向偏置电压,使得电子传输从衬底到SBCF区域。 在进入该NEA区域时,许多电子被释放到SBCF表面上方的真空水平中,并朝向正偏压的荧光屏阳极加速,从而点亮荧光屏以进行显示。 要关闭,只需关闭SBCF /基板上施加的电位。 可用于场致发射平板显示器。

    Methods for damage etch and texturing of silicon single crystal substrates
    3.
    发明授权
    Methods for damage etch and texturing of silicon single crystal substrates 有权
    硅单晶衬底的损伤蚀刻和纹理化方法

    公开(公告)号:US08329046B2

    公开(公告)日:2012-12-11

    申请号:US12366141

    申请日:2009-02-05

    IPC分类号: H01B13/00

    CPC分类号: H01L31/02363 Y02E10/50

    摘要: Methods for performing damage etch and texturing of single crystal silicon substrates, particularly for use as solar cells or photovoltaic cells. Damage etch with a TMAH solution followed by texturing using solution of KOH or NaOH mixed with IPA is particularly advantageous. The substitution of some of the IPA with ethylene glycol further improves results. Also disclosed is a process that combines both damage etch and texturing etch into a single step.

    摘要翻译: 用于执行单晶硅衬底的损伤蚀刻和纹理化的方法,特别是用作太阳能电池或光伏电池的方法。 使用TMAH溶液的损伤蚀刻,然后使用与IPA混合的KOH或NaOH的溶液进行纹理化是特别有利的。 一些IPA与乙二醇的取代进一步提高了结果。 还公开了将损伤蚀刻和纹理蚀刻两者结合到单个步骤中的过程。

    System and method for high intensity small spot optical metrology
    4.
    发明授权
    System and method for high intensity small spot optical metrology 有权
    高强度小光点光学测量系统及方法

    公开(公告)号:US07349103B1

    公开(公告)日:2008-03-25

    申请号:US11264733

    申请日:2005-10-31

    IPC分类号: G01B11/24

    摘要: An apparatus and method for examining features of a sample with a broadband beam of light obtained from a long-wavelength source that may include two distinct emitters that emit a long-wavelength radiation and a short-wavelength source that emits a short-wavelength radiation. A passage is positioned between the sources and a reflective beam combining optics is provided for shaping the long-wavelength radiation to enter the short-wavelength source via the passage and also for shaping the short-wavelength radiation that exits through the passage and propagates toward the long-wavelength source. The reflective beam combining optics shape the short-wavelength radiation such that it re-enters the short-wavelength source via the passage and is combined with the long-wavelength radiation into the broadband beam that exits the short-wavelength source. A beam steering optics projects the broadband beam to a spot on the sample, and a scattered broadband radiation from the spot is intercepted and shaped to a broadband signal beam, which is passed through a sampling pinhole that passes a test portion of it on to a detector for optical examination; the test portion that is passed can correspond to a center portion of the spot.

    摘要翻译: 一种用于利用从可能包括发射长波长辐射的两个不同的发射体和发射短波长辐射的短波长源的长波长源获得的宽带光束来检查样本的特征的装置和方法。 通道位于源之间,并且提供反射光束组合光学器件用于使长波长辐射成形以经由通道进入短波长源,并且还用于使通过通道离开的短波长辐射成形,并朝向 长波长源。 反射光束组合光学器件形成短波长辐射,使得其经由通道重新进入短波长源并且与长波长辐射组合成离开短波长源的宽带光束。 光束转向光学器件将宽带光束投射到样品上的光点,并且来自光斑的散射宽带辐射被截取并成形为宽带信号光束,该宽带信号光束通过将其测试部分通过的采样针孔 光学检测仪 通过的测试部分可以对应于点的中心部分。

    Large cross-sectional area molecular beam source for semiconductor
processing
    5.
    发明授权
    Large cross-sectional area molecular beam source for semiconductor processing 失效
    用于半导体加工的大截面积分子束源

    公开(公告)号:US4774416A

    公开(公告)日:1988-09-27

    申请号:US911380

    申请日:1986-09-24

    IPC分类号: H01L21/203 C30B23/02 H05H3/00

    CPC分类号: C30B23/002

    摘要: A large cross-section molecular beam source for the controlled delivery of a reactant species to provide deposition or etching over a generally large cross-sectional surface area of a substrate is described. The apparatus includes a source of the reactant species, typically as a gaseous material, a microchannel array for providing a directionalized, low divergence molecular beam of the reactant species having a cross-sectional dimension directly comparable to that of the substrate. The apparatus further includes a substrate mount that maintains the substrate so as to allow the direct impingement of the columnarized molecular beam on the wide area surface of the substrate. The reactant species source, microchannel array and substrate mount are housed within a vacuum chamber adapted to maintain a vacuum sufficient to enable the formation of the directionalized molecular beam of the reactant species upon its passing through the microchannel array.

    摘要翻译: 描述了用于受控输送反应物种以提供基底的通常大的横截面表面积的沉积或蚀刻的大的横截面分子束源。 该装置包括通常作为气态材料的反应物种的源,用于提供具有与基底直径相当的横截面尺寸的反应物种类的方向化,低发散分子束的微通道阵列。 该装置还包括一个衬底安装件,其保持衬底以便允许将柱状分子束直接撞击在衬底的宽区域表面上。 反应物种源,微通道阵列和衬底安装件被容纳在真空室内,该真空室适于保持足够的真空,使其能够在其通过微通道阵列时形成反应物物质的定向分子束。

    Apparatus for depositing a low work function material
    6.
    发明授权
    Apparatus for depositing a low work function material 失效
    用于沉积低功函数材料的装置

    公开(公告)号:US07118630B1

    公开(公告)日:2006-10-10

    申请号:US09636134

    申请日:2000-08-10

    IPC分类号: C23C16/00

    摘要: Short-wavelength photons are used to ablate material from a low work function target onto a suitable substrate. The short-wavelength photons are at or below visible wavelength. The elemental composition of the deposit is controlled by the composition of the target and the gaseous environment in which the ablation process is performed. The process is carried out in a deposition chamber to which a short-wavelength laser is mounted and which includes a substrate holder which can be rotated, tilted, heated, or cooled. The target material is mounted onto a holder that spins the target during laser ablation. In addition, the deposition chamber is provided with a vacuum pump, an external gas supply with atomizer and radical generator, a gas generator for producing a flow of molecules on the substrate, and a substrate cleaning device, such as an ion gun. The substrate can be rotated and tilted, for example, whereby only the tip of an emitter can be coated with a low work function material.

    摘要翻译: 短波长光子用于将材料从低功函数目标消融到合适的基底上。 短波长光子处于或低于可见波长。 沉积物的元素组成由靶的组成和进行消融处理的气体环境控制。 该过程在安装有短波长激光器的沉积室中进行,其包括可旋转,倾斜,加热或冷却的衬底保持器。 目标材料安装在激光烧蚀过程中旋转目标的支架上。 此外,沉积室设置有真空泵,具有雾化器和自由基发生器的外部气体供应器,用于在基板上产生分子流的气体发生器和诸如离子枪的基板清洁装置。 例如,衬底可以旋转和倾斜,由此只有发射器的尖端可以用低功函数材料涂覆。

    Generation of low work function, stable compound thin films by laser ablation
    7.
    发明授权
    Generation of low work function, stable compound thin films by laser ablation 失效
    产生低功函数,通过激光烧蚀稳定复合薄膜

    公开(公告)号:US06235615B1

    公开(公告)日:2001-05-22

    申请号:US09504302

    申请日:2000-02-15

    IPC分类号: H01L2120

    摘要: Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500° C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

    摘要翻译: 产生低功函数,通过激光烧蚀稳定复合薄膜。 可以通过同时激光烧蚀硅来合成具有低功函数的复合薄膜,并将碱金属热蒸发到氧气环境中。 例如,化合物薄膜可以由Si / Cs / O组成。 可以通过改变硅/碱金属/氧比例来改变薄膜的功函数。 通过紫外光电子能谱(UPS)证实沉积在硅衬底上的复合薄膜的低功函数。 通过X射线光电子能谱(XPS)测量,复合薄膜可稳定至高达500℃。 测试确定了对于化合物薄膜的某些化学组成和退火温度,检测到负电子亲和力(NEA)。 低功函数,稳定的复合薄膜可用于太阳能电池,场致发射平板显示器,电子枪和冷阴极电子枪。

    Long-laser-pulse method of producing thin films
    8.
    发明授权
    Long-laser-pulse method of producing thin films 失效
    长激光脉冲生产薄膜的方法

    公开(公告)号:US5019552A

    公开(公告)日:1991-05-28

    申请号:US482131

    申请日:1990-02-20

    摘要: A method of depositing thin films by means of laser vaporization employs a long-pulse laser (Nd-glass of about one millisecond duration) with a peak power density typically in the range 10.sup.5 -10.sup.6 W/cm.sup.2. The method may be used to produce high T.sub.c superconducting films of perovskite material. In one embodiment, a few hundred nanometers thick film of YBa.sub.2 Cu.sub.3 O.sub.7-x is produced on a SrTiO.sub.3 crystal substrate in one or two pulses. In situ-recrystallization and post-annealing, both at elevated temperature and in the presence of an oxidizing agenThe invention described herein arose in the course of, or under, Contract No. DE-C03-76SF0098 between the United States Department of Energy and the University of California.

    摘要翻译: 通过激光蒸发沉积薄膜的方法采用通常在105-106W / cm 2范围内的峰值功率密度的长脉冲激光(大约1毫秒持续时间的Nd玻璃)。 该方法可用于生产钙钛矿材料的高Tc超导膜。 在一个实施例中,在一个或两个脉冲中,在SrTiO3晶体衬底上产生几百纳米厚的YBa2Cu3O7-x膜。 在高温和氧化剂存在下,原位重结晶和后退火有助于提高膜质量。 薄膜厚度表现出具有蒸汽发射角的cosθ依赖性,并且薄膜组成与该角度无关。

    CO2 nozzles
    9.
    发明授权
    CO2 nozzles 有权
    二氧化碳喷嘴

    公开(公告)号:US08454409B2

    公开(公告)日:2013-06-04

    申请号:US12556643

    申请日:2009-09-10

    IPC分类号: B24B1/00 B24C5/02

    摘要: A nozzle and method of providing CO2 for cleaning includes providing a CO2 flow; phase transferring the CO2 flow into gaseous CO2 and CO2 pellets; interrupting the CO2 flow with a screen member; retaining the CO2 pellets of a select larger size upstream of the screen member; permitting the CO2 pellets of a select smaller size to pass through the screen member for cleaning.

    摘要翻译: 提供用于清洁的二氧化碳的喷嘴和方法包括提供CO 2流; 将CO 2流相转移到气态CO 2和CO 2颗粒中; 用屏幕构件中断二氧化碳流; 保持屏幕构件上游选择较大尺寸的二氧化碳颗粒; 允许选择较小尺寸的二氧化碳颗粒通过筛网构件进行清洁。

    Integrated Substrate Cleaning System and Method
    10.
    发明申请
    Integrated Substrate Cleaning System and Method 审中-公开
    集成基板清洗系统及方法

    公开(公告)号:US20120279519A1

    公开(公告)日:2012-11-08

    申请号:US13284078

    申请日:2011-10-28

    IPC分类号: B08B7/00 B08B13/00

    摘要: A method for cleaning a substrate having organic and inorganic residues disposed thereon is provided. The method includes removing organic residue from the substrate using atmospheric oxygen plasma, and removing inorganic residue from the substrate using cryogenic CO2. The substrate may be pretreated using a benign cooling agent, and post-treated using a dilute wet chemical cleaning method.

    摘要翻译: 提供了一种用于清洁其上设置有有机和无机残留物的底物的方法。 该方法包括使用大气氧等离子体从底物中除去有机残留物,并使用低温CO 2从底物中除去无机残留物。 可以使用良性冷却剂对基材进行预处理,并使用稀释的湿化学清洗方法进行后处理。