发明授权
- 专利标题： Phase shift mask and making process
- 专利标题（中）： 相移掩模和制作过程
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申请号： US09573560申请日： 2000-05-19
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公开(公告)号： US06352801B1公开(公告)日： 2002-03-05
- 发明人: Satoshi Okazaki , Hideo Kaneko , Tamotsu Maruyama , Yukio Inazuki
- 申请人： Satoshi Okazaki , Hideo Kaneko , Tamotsu Maruyama , Yukio Inazuki
- 优先权： JP11-139597 19990520
- 主分类号： G03F900
- IPC分类号： G03F900
摘要：
A phase shift mask has a phase shifter formed on a substrate which is transmissive to exposure light. The phase shifter serving as a second light transmissive region is constructed of gadolinium gallium garnet. The shifter film formed under the sputtering conditions capable of restraining the generation of particles causing film defects is homogeneous, and the phase shift mask is of high precision.
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