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公开(公告)号：US08980503B2
公开(公告)日：2015-03-17
申请号：US13196952
申请日：2011-08-03
摘要： A binary photomask blank has on a transparent substrate a light-shielding film including substrate-side and surface-side compositionally graded layers, having a thickness of 35-60 nm, and composed of a silicon base material containing a transition metal and N and/or O. The substrate-side compositionally graded layer has a thickness of 10-58.5 nm , and a N+O content of 25-40 at % at its lower surface and 10-23 at % at its upper surface. The surface-side compositionally graded layer has a thickness of 1.5-8 nm, and a N+O content of 10-45 at % at its lower surface and 45-55 at % at its upper surface.
摘要翻译： 二元光掩模坯料在透明基板上具有包括厚度为35-60nm的基板侧和表面侧的组成梯度层的遮光膜，由含有过渡金属和N和/ 基底侧组成梯度层的厚度为10-58.5nm，N + O含量在其下表面为25-40at％，在其上表面为10-23at％。 表面侧组成梯度层的厚度为1.5-8nm，其下表面的N + O含量为10-45原子％，其上表面为45-55原子％。
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2.发明授权Photomask blank and making method, photomask, light pattern exposure method, and design method of transition metal/silicon base material film 有权光掩模坯料和制造方法，光掩模，光图案曝光方法以及过渡金属/硅基材料薄膜的设计方法公开(公告)号：US08475978B2
公开(公告)日：2013-07-02
申请号：US13228501
申请日：2011-09-09
申请人： Hiroki Yoshikawa , Yukio Inazuki , Ryuji Koitabashi , Hideo Kaneko , Takashi Haraguchi , Yosuke Kojima , Tomohito Hirose
发明人： Hiroki Yoshikawa , Yukio Inazuki , Ryuji Koitabashi , Hideo Kaneko , Takashi Haraguchi , Yosuke Kojima , Tomohito Hirose
摘要： A photomask blank has a film of a transition metal/silicon base material comprising a transition metal, silicon, oxygen and nitrogen, having an oxygen content of at least 3 atom %, and satisfying the formula: 4×CSi/100−6×CM/100>1 wherein CSi is a silicon content in atom % and CM is a transition metal content in atom %.
摘要翻译： 光掩模坯料具有包含氧含量为至少3原子％的过渡金属，硅，氧和氮的过渡金属/硅基材的膜，并且满足下式：4×CSi / 100-6×CM 其中CSi是原子％的硅含量，CM是原子％的过渡金属含量。
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公开(公告)号：US20100248090A1
公开(公告)日：2010-09-30
申请号：US12750044
申请日：2010-03-30
申请人： Yukio INAZUKI , Hideo Kaneko , Hiroki Yoshikawa
发明人： Yukio INAZUKI , Hideo Kaneko , Hiroki Yoshikawa
IPC分类号： G03F1/00
摘要： A photomask blank comprises a transparent substrate, a light-shielding film of an optionally transition metal-containing silicon material, and an etching mask film of a chromium compound base material. The etching mask film consists of multiple layers of different composition which are deposited by reactive sputtering, the multiple layers including, in combination, a first layer of a material which imparts a compression stress when deposited on the substrate as a single composition layer and a second layer of a material which imparts a tensile stress when deposited on the substrate as a single composition layer.
摘要翻译： 光掩模坯料包括透明基板，任选含过渡金属的硅材料的遮光膜和铬化合物基材的蚀刻掩模膜。 蚀刻掩模膜由通过反应溅射沉积的不同组成的多层组成，多层组合包括当作为单一组合物层沉积在基板上时施加压缩应力的材料的第一层，第二层 当作为单一组合物层沉积在基底上时施加拉伸应力的材料层。
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4.发明申请公开(公告)号：US20100246932A1
公开(公告)日：2010-09-30
申请号：US12750023
申请日：2010-03-30
申请人： Yukio INAZUKI , Hideo Kaneko , Hiroki Yoshikawa
发明人： Yukio INAZUKI , Hideo Kaneko , Hiroki Yoshikawa
IPC分类号： G06K9/00
CPC分类号： G03F1/84 , G03F7/70783
摘要： A photomask blank having a film on a substrate is inspected by (A) measuring a surface topography of a photomask blank having a film to be inspected for stress, (B) removing the film from the photomask blank to provide a treated substrate, (C) measuring a surface topography of the treated substrate, and (D) comparing the surface topography of the photomask blank with the surface topography of the treated substrate, thereby evaluating a stress in the film.
摘要翻译： 通过（A）测量具有要检查的应力膜的光掩模坯料的表面形貌来检查在基板上具有膜的光掩模坯料，（B）从光掩模坯料除去膜以提供经处理的基板（C ）测量经处理的基底的表面形貌，以及（D）将光掩模毛坯的表面形貌与经处理的基底的表面形貌进行比较，从而评估膜中的应力。
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公开(公告)号：US20100176087A1
公开(公告)日：2010-07-15
申请号：US12687539
申请日：2010-01-14
摘要： A photomask is manufactured by providing a photomask blank comprising a transparent substrate, a phase shift film, and a light-shielding film, the phase shift film and the light-shielding film including silicon base material layers, a N+O content in the silicon base material layer of the phase shift film differing from that of the light-shielding film, and chlorine dry etching the blank with oxygen-containing chlorine gas in a selected O/C1 ratio for selectively etching away the silicon base material layer of the light-shielding film.
摘要翻译： 通过提供包括透明基板，相移膜和遮光膜的光掩模坯料制造光掩模，所述相移膜和所述遮光膜包括硅基材料层，所述硅中的N + O含量 所述相移膜的基材层与所述遮光膜的基材层不同，并且以选择的O / C1比对含有氧的氯气对所述坯料进行氯干蚀刻，以选择性地蚀刻所述发光元件的硅基材层， 屏蔽膜。
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公开(公告)号：US07632609B2
公开(公告)日：2009-12-15
申请号：US11545451
申请日：2006-10-11
IPC分类号： G03F1/14
CPC分类号： G03F1/32 , Y10T428/31616
摘要： A susceptor having the most basic structure has a three-layer structure including a first and a second transparent quartz part and an opaque quartz part sandwiched therebetween. For example, the opaque quartz part is made of “foamed quartz”. In addition, the opacity of the opaque quartz part to flash light is determined to fall within an appropriate range based on the material or thickness of the opaque quartz part, taking into consideration the composition or thickness of a thin film formed on the substrate and various conditions concerning the energy of the irradiation light during flash light irradiation or the like. The stack structure may be composed of a stack of a plurality of opaque quartz layers having different opacities.
摘要翻译： 具有最基本结构的感受体具有包括第一和第二透明石英部分和夹在其间的不透明石英部分的三层结构。 例如，不透明石英部分由“发泡石英”制成。 此外，考虑到在基板上形成的薄膜的组成或厚度以及各种不同的形状，不透明石英部分对闪光的不透明度被确定为基于不透明石英部分的材料或厚度在适当范围内 关于闪光照射等期间的照射光的能量的条件。 堆叠结构可以由具有不同不透明度的多个不透明石英层的堆叠构成。
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公开(公告)号：US07514185B2
公开(公告)日：2009-04-07
申请号：US11130278
申请日：2005-05-17
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , C23C14/0676
摘要： A photomask blank is prepared by forming a light-absorbing film on a transparent substrate, and irradiating the light-absorbing film with light from a flash lamp at an energy density of 3 to 40 J/cm2. A photomask is prepared by forming a resist pattern on the photomask blank by photolithography, etching away those portions of the light-absorbing film which are not covered with the resist pattern, and removing the resist.
摘要翻译： 通过在透明基板上形成光吸收膜，并以3〜40J / cm 2的能量密度从闪光灯照射光吸收膜来制备光掩模坯料。 通过光刻法在光掩模坯料上形成抗蚀剂图案，蚀刻除了未被抗蚀剂图案覆盖的光吸收膜的那些部分，并除去抗蚀剂来制备光掩模。
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公开(公告)号：US07329474B2
公开(公告)日：2008-02-12
申请号：US10811924
申请日：2004-03-30
CPC分类号： C23C14/3492 , C23C14/0084 , C23C14/048 , C23C14/0676 , C23C14/0682 , C23C14/3464 , G03F1/32 , Y10T428/31616
摘要： A photomask blank comprising a multilayer film including at least four layers of different compositions, wherein the interface between the layers is moderately graded in composition; a phase shift mask blank comprising a phase shift film of at least two layers including a surface layer of a composition based on a zirconium silicide compound and a substrate adjacent layer of a composition based on a molybdenum silicide compound, and a further layer between one layer and another layer of a different composition, the further layer having a composition moderately graded from that of the one layer to that of the other layer; a phase shift mask blank comprising a phase shift film including a plurality of layers containing a metal and silicon in different compositional ratios which are stacked in such order that a layer having a higher etching rate is on the substrate side and a layer having a lower etching rate is on the surface side. The invention provides a photomask blank, typically a phase shift mask blank, which satisfies optical properties such as transmittance, reflectance and refractive index at an exposure wavelength of interest, and has an etched pattern with a minimal line edge roughness, and a photomask, typically a phase shift mask obtained therefrom.
摘要翻译： 一种光掩模坯料，其包括包含至少四层不同组成的多层膜，其中所述层之间的界面在组成上适度地分级; 相移掩模坯料，其包括至少两层的相移膜，所述相移膜包括基于硅化锆化合物的组合物的表面层和基于硅化钼化合物的组合物的基底相邻层，以及在层之间的另一层 和另一层不同的组成，所述另一层具有从所述一层到另一层的组成适度分级的组成; 相移掩模坯料，其包括相移膜，所述相移膜包括多个层，所述多个层包含不同组成比的金属和硅，所述多个层按照使得具有较高蚀刻速率的层位于基板侧上的顺序层叠，并且具有较低蚀刻 速率在表面。 本发明提供了一种光掩模坯料，通常是相移掩模坯料，其满足感兴趣的曝光波长下的透光率，反射率和折射率等光学特性，并且具有最小线边缘粗糙度的蚀刻图案，以及光掩模 从其获得的相移掩模。
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公开(公告)号：US07264908B2
公开(公告)日：2007-09-04
申请号：US10834919
申请日：2004-04-30
申请人： Hideo Kaneko , Tetsushi Tsukamoto
发明人： Hideo Kaneko , Tetsushi Tsukamoto
IPC分类号： G03F9/00
摘要： There is disclosed a photo mask blank comprising at least a light-shielding film containing Cr and one or more layers of an anti-reflection film disposed on a substrate, wherein at least one layer of the anti-reflection film contains any one selected from the group consisting of silicon oxide, silicon nitride and silicon oxynitride. And there is also disclosed a photo mask blank comprising at least a light-shielding film containing Cr and two or more layers of an anti-reflection film disposed on a substrate, wherein the anti-reflection film comprises at least a layer of film with high transmittance at exposure wavelength, and a layer of film with lower transmittance at exposure wavelength than that of the layer and higher transmittance at inspection wavelength than at that exposure wavelength. Thus, there can be provided a photo mask blank having an anti-reflection film that can sufficiently reduce reflectance even if the exposure wavelength is short.
摘要翻译： 公开了一种光掩模坯料，其至少包含含有Cr的遮光膜和设置在基板上的一层或多层防反射膜，其中至少一层防反射膜包含从 由氧化硅，氮化硅和氮氧化硅组成的组。 并且还公开了一种光掩模坯料，其至少包含含有Cr的遮光膜和设置在基板上的两层或多层防反射膜，其中抗反射膜至少包括一层具有高 曝光波长下的透射率，曝光波长下的透光率低于层的透光率，检测波长的透射率高于曝光波长。 因此，可以提供一种具有防反射膜的光掩模坯料，即使曝光波长短，也可以充分降低反射率。
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公开(公告)号：US06451489B1
公开(公告)日：2002-09-17
申请号：US09666907
申请日：2000-09-20
申请人： Hideo Kaneko
发明人： Hideo Kaneko
IPC分类号： G03F900
摘要： A phase shift photomask is constructed by forming a phase shifter defining a second light transmissive region on a substrate transmissive to exposure light. Exposure light undergoes multiple reflection within the phase shifter. This enables use of a thinner shifter film, minimizes a phase variation relative to a film thickness variation, and alleviates optical restraints on the film.
摘要翻译： 通过在透射曝光的基板上形成限定第二透光区域的移相器构成相移光掩模。 曝光光在移相器内经历多次反射。 这使得能够使用更薄的移位膜，使相对于膜厚度变化的相位变化最小化，并减轻膜上的光学约束。
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