发明授权
- 专利标题: Optimized decoupling capacitor using lithographic dummy filler
- 专利标题(中): 使用光刻虚拟填料的优化去耦电容器
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申请号: US09562220申请日: 2000-04-28
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公开(公告)号: US06353248B1公开(公告)日: 2002-03-05
- 发明人: Armin M Reith , Louis Hsu , Henning Haffner , Gunther Lehmann
- 申请人: Armin M Reith , Louis Hsu , Henning Haffner , Gunther Lehmann
- 主分类号: H01L2976
- IPC分类号: H01L2976
摘要:
A method to optimize the size and filling of decoupling capacitors for very large scale integrated circuits (VLSI) using existing lithographic fillers. The method combines the automatic or manual generation of lithographic fill patterns with the forming of the capacitors. According to the method, when the chip layout is about to be finished, all remaining empty space on the chip gets identified by a layout tool. Then, the closest power-supply nets get extracted. All power supplies and their combinations are sorted in a connection table which determines the appropriate types of capacitances once the power-supply nets closest to the empty spaces extracted from the layout. The empty spaces are then assigned appropriate decoupling capacitances. Decoupling capacitors generated by the method are suitable for VLSI power supplies for noise reduction.