A magnetic memory cell is disclosed having a structure that prevents disruptions to the magnetization in the sense layer of the magnetic memory cell. In one embodiment, the structure includes a high permeability magnetic film that serves as a keeper for the sense layer magnetization. The keeper structure provides a flux closure path that directs demagnetization fields away from the sense layer. In another embodiment, the structure contains a hard ferromagnetic film that applies a local magnetic field to the sense layer in the magnetic memory cell.