发明授权
- 专利标题： Semiconductor device and method of manufacturing thereof
- 专利标题（中）： 半导体装置及其制造方法
-
申请号： US09606184申请日： 2000-06-29
-
公开(公告)号： US06359306B1公开(公告)日： 2002-03-19
- 发明人: Hideaki Ninomiya
- 申请人： Hideaki Ninomiya
- 优先权： JP11-186546 19990630
- 主分类号： H01L2976
- IPC分类号： H01L2976
摘要：
In a method of manufacturing a trench-MOS gate structure device, trenches for contact and n-type source layers are alternately formed in a region situated between parallel trench-MOS gates. Thereby, scale down of the device is possible without requiring mask alignment.
信息查询
