发明授权
US06365463B2 Method for forming a high-precision analog transistor with a low threshold voltage roll-up and a digital transistor with a high threshold voltage roll-up
有权
用于形成具有低阈值电压累加的高精度模拟晶体管和具有高阈值电压卷积的数字晶体管的方法
- 专利标题： Method for forming a high-precision analog transistor with a low threshold voltage roll-up and a digital transistor with a high threshold voltage roll-up
- 专利标题（中）： 用于形成具有低阈值电压累加的高精度模拟晶体管和具有高阈值电压卷积的数字晶体管的方法
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申请号： US09316450申请日： 1999-05-21
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公开(公告)号： US06365463B2公开(公告)日： 2002-04-02
- 发明人: Alexander Kalnitsky , Albert Bergemont
- 申请人： Alexander Kalnitsky , Albert Bergemont
- 主分类号： H01L21336
- IPC分类号： H01L21336
摘要：
A process for forming high-precision analog transistors with a low threshold voltage roll-up and digital transistors with a high threshold voltage roll-up is disclosed. The process selectively implants the polysilicon layer that forms the gates of the analog transistors so that the doping concentration of the analog gates is greater than the doping concentration of the digital gates.
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