- 专利标题： Thin tensile layers in shallow trench isolation and method of making same
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申请号： US09536860申请日： 2000-03-27
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公开(公告)号： US06368931B1公开(公告)日： 2002-04-09
- 发明人: Kelin J. Kuhn , Ian R. Post
- 申请人： Kelin J. Kuhn , Ian R. Post
- 主分类号： H01L21331
- IPC分类号： H01L21331
摘要：
The present invention relates to a method of forming an isolation trench that comprises forming a recess in a substrate and forming a film upon the sidewall under conditions that cause the film to have a tensile load. The method includes filling the recess with a material that imparts a compressive load upon the film under conditions that oppose the tensile load. The present invention is particularly well suited for shallow isolation trench filling in the 0.13 micron geometry range, and smaller.