发明授权
US06372536B1 II-VI semiconductor component having at least one junction between a layer containing Se and a layer containing BeTe, and process for producing the junction
失效
II-VI族半导体元件在含有Se的层和含有BeTe的层之间具有至少一个结，以及用于制造该结的工艺
- 专利标题： II-VI semiconductor component having at least one junction between a layer containing Se and a layer containing BeTe, and process for producing the junction
- 专利标题（中）： II-VI族半导体元件在含有Se的层和含有BeTe的层之间具有至少一个结，以及用于制造该结的工艺
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申请号： US09480756申请日： 2000-01-10
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公开(公告)号： US06372536B1公开(公告)日： 2002-04-16
- 发明人: Frank Fischer , Andreas Waag , Thierry Baron , Gottfried Landwehr , Thomas Litz , Günter Reuscher , Markus Keim , Ulrich Zehnder , Hans-Peter Steinbrück , Mario Nagelstrasser , Hans-Jürgen Lugauer
- 申请人： Frank Fischer , Andreas Waag , Thierry Baron , Gottfried Landwehr , Thomas Litz , Günter Reuscher , Markus Keim , Ulrich Zehnder , Hans-Peter Steinbrück , Mario Nagelstrasser , Hans-Jürgen Lugauer
- 优先权： DE19729396 19970709
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
The invention relates to a II-VI semiconductor component in which, within a series of layers, there is provided at least one junction between a semiconductor layer containing BeTe and a semiconductor layer containing Se. A boundary layer between the semiconductor layer containing BeTe and the semiconductor layer containing Se is prepared in such a way that it forms a Be—Se configuration.
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