发明授权
- 专利标题： Method of hard mask patterning
- 专利标题（中）： 硬掩模图案化方法
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申请号： US09495344申请日： 2000-02-01
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公开(公告)号： US06376379B1公开(公告)日： 2002-04-23
- 发明人: Shyue Fong Quek , Ting Cheong Ang , Jun Song , Sang Yee Loong
- 申请人： Shyue Fong Quek , Ting Cheong Ang , Jun Song , Sang Yee Loong
- 主分类号： H01L21302
- IPC分类号： H01L21302
摘要：
A method of patterning a hard mask, the comprising the following steps. A semiconductor structure is provided. A conductor film is formed over the semiconductor structure. An oxide layer is formed over the conductor film. A patterned metal oxide layer is formed over the conductor film. The oxide layer and the conductor film are etched, using the metal oxide layer as a hard mask, to form a patterned structure.
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