发明授权
- 专利标题： Dual tox trench dram structures and process using V-groove
- 专利标题（中）： 双毒tox沟结构和工艺采用V型槽
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申请号： US09225127申请日： 1999-01-04
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公开(公告)号： US06380027B2公开(公告)日： 2002-04-30
- 发明人: Toshiharu Furukawa , Jeffrey P. Gambino , Edward W. Kiewra , Jack A. Mandelman , Carl J. Radens , William R. Tonti , Mary E. Weybright
- 申请人： Toshiharu Furukawa , Jeffrey P. Gambino , Edward W. Kiewra , Jack A. Mandelman , Carl J. Radens , William R. Tonti , Mary E. Weybright
- 主分类号： H01L21242
- IPC分类号： H01L21242
摘要：
A structure and method for simultaneously forming array structures and support structures on a substrate comprises forming the array structures to have a V-groove, forming the support structures to have a planar surface, and simultaneously forming a first oxide in the V-groove and a second oxide in the planar surface, wherein the first oxide is thicker than the second oxide.