发明授权
US06380029B1 Method of forming ono stacked films and DCS tungsten silicide gate to improve polycide gate performance for flash memory devices
有权
形成叠层薄膜和DCS钨硅化物栅极以提高闪存器件的多晶硅栅极性能的方法
- 专利标题： Method of forming ono stacked films and DCS tungsten silicide gate to improve polycide gate performance for flash memory devices
- 专利标题（中）： 形成叠层薄膜和DCS钨硅化物栅极以提高闪存器件的多晶硅栅极性能的方法
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申请号： US09205899申请日： 1998-12-04
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公开(公告)号： US06380029B1公开(公告)日： 2002-04-30
- 发明人: Kent Kuohua Chang , Kenneth Wo-Wai Au , John Jianshi Wang
- 申请人： Kent Kuohua Chang , Kenneth Wo-Wai Au , John Jianshi Wang
- 主分类号： H01L21330
- IPC分类号： H01L21330
摘要：
In one embodiment, the present invention relates to a method of forming a flash memory cell, involving the steps of forming a tunnel oxide on a substrate; forming a first polysilicon layer over the tunnel oxide; forming an insulating layer over the first polysilicon layer, the insulating layer comprising a first oxide layer over the first polysilicon layer, a nitride layer over the first oxide layer, and a second oxide layer over the nitride layer; forming a second polysilicon layer over the insulating layer; forming a tungsten silicide layer over the second polysilicon layer by chemical vapor deposition using WF6 and SiH2Cl2; etching at least the first polysilicon layer, the second polysilicon layer, the insulating layer, and the tungsten silicide layer thereby defining at least one stacked gate structure; and forming a source region and a drain region in the substrate, thereby forming at least one memory cell.