A method for forming metal interconnection structure is disclosed. A semiconductor substrate is provided, the substrate has a first silicon nitride layer formed thereon, and a first inter-metal layer formed on the surface of the first stop layer. The first inter-metal layer is etched to form an opening in the inter-metal layer using the first photoresist. A second silicon nitride layer is formed. A dielectric layer is formed. A second inter-metal layer is formed. The second inter-metal layer is etched using the second photoresist. The third silicon nitride layer is formed. The third layer is etched back. The dielectric layer is removed. The third stop layer, the second silicon, nitride layer and the first stop layer are etched. The barrier layer is deposited into a via trench. The trenches are filled by a metal layer. Finally, the metal layer is planarized.