发明授权
US06380596B1 METHOD OF FORMING A LOCAL INTERCONNECT, METHOD OF FABRICATING INTEGRATED CIRCUITRY COMPRISING AN SRAM CELL HAVING A LOCAL INTERCONNECT AND HAVING CIRCUITRY PERIPHERAL TO THE SRAM CELL, AND METHOD OF FORMING CONTACT PLUGS
有权
形成本地互连的方法，将包含具有本地互连的具有电路外围的SRAM单元的集成电路整合到SRAM单元的方法以及形成接触电极的方法
- 专利标题： METHOD OF FORMING A LOCAL INTERCONNECT, METHOD OF FABRICATING INTEGRATED CIRCUITRY COMPRISING AN SRAM CELL HAVING A LOCAL INTERCONNECT AND HAVING CIRCUITRY PERIPHERAL TO THE SRAM CELL, AND METHOD OF FORMING CONTACT PLUGS
- 专利标题（中）： 形成本地互连的方法，将包含具有本地互连的具有电路外围的SRAM单元的集成电路整合到SRAM单元的方法以及形成接触电极的方法
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申请号： US09935469申请日： 2001-08-21
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公开(公告)号： US06380596B1公开(公告)日： 2002-04-30
- 发明人: Todd R. Abbott , Michael P. Violette , Charles H. Dennison
- 申请人： Todd R. Abbott , Michael P. Violette , Charles H. Dennison
- 主分类号： H01L31119
- IPC分类号： H01L31119
摘要：
In one implementation, a substrate is provided which has at least two nodes to be electrically connected. A first conductivity type semiconductive material is formed over and in electrical connection with one of the nodes. A conductive diffusion barrier material is formed over and in electrical connection with the first conductivity type semiconductive material. A second conductivity type semiconductive material is formed over and in electrical connection with the first conductivity type semiconductive material through the conductive diffusion barrier material, and over and in electrical connection with another of the nodes. The first conductivity type semiconductive material, the conductive diffusion barrier material and the second conductivity type semiconductive material are formed into a local interconnect electrically connecting the one node and the another node. Local interconnects fabricated by this and other methods are also contemplated. The invention includes in one implementation a method of forming contact plugs.
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