A semiconductor memory device that is capable of reducing the probability of a bridge being generated between storage node electrodes, and a mask pattern for defining the storage node electrodes, are provided. The semiconductor memory device includes a plurality of storage node electrodes that are vertically and horizontally arranged a predetermined distance apart in columns and rows, respectively. Among the plurality of storage node electrodes, storage node electrodes belonging to even-numbered columns are shifted up or down a predetermined distance. The shifted storage node electrodes are shifted in a gap between vertically adjacent storage node electrodes belonging to a same column.