发明授权
US06383345B1 Method of forming indium tin oxide thin film using magnetron negative ion sputter source 失效
使用磁控管负离子溅射源形成氧化铟锡薄膜的方法

  • 专利标题: Method of forming indium tin oxide thin film using magnetron negative ion sputter source
  • 专利标题(中): 使用磁控管负离子溅射源形成氧化铟锡薄膜的方法
  • 申请号: US09742331
    申请日: 2000-12-22
  • 公开(公告)号: US06383345B1
    公开(公告)日: 2002-05-07
  • 发明人: Steven KimDaeil Kim
  • 申请人: Steven KimDaeil Kim
  • 主分类号: C23C1434
  • IPC分类号: C23C1434
Method of forming indium tin oxide thin film using magnetron negative ion sputter source
摘要:
A method for forming an indium tin oxide thin film on a substrate in the present invention includes the steps of introducing a mixture of an inert gas and a low electron affinity element in close proximity to a target as a primary sputter ion beam source, providing an oxygen gas between the target and the substrate, applying an electrical energy to the target to ionize the mixture, confining electrons generated in the ionization in close proximity to a surface of the target facing towards the substrate, disintegrating negatively charged ions from the target, and forming the indium tin oxide thin film on the substrate.
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