Tailoring of a wetting/barrier layer to reduce electromigration in an aluminum interconnect

发明授权

US06383915B1 Tailoring of a wetting/barrier layer to reduce electromigration in an aluminum interconnect 失效

标题翻译：调整润湿/阻隔层以减少铝互连中的电迁移

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专利标题： Tailoring of a wetting/barrier layer to reduce electromigration in an aluminum interconnect
专利标题（中）： 调整润湿/阻隔层以减少铝互连中的电迁移
申请号： US09244280

申请日： 1999-02-03
公开(公告)号： US06383915B1

公开(公告)日： 2002-05-07
发明人: Jingang Su , Gongda Yao , Zhang Xu , Fusen Chen
申请人： Jingang Su , Gongda Yao , Zhang Xu , Fusen Chen
主分类号： H01L214763
IPC分类号： H01L214763

Tailoring of a wetting/barrier layer to reduce electromigration in an aluminum interconnect

摘要：

We have discovered particular wetting layer or wetting/barrier layer structures which enable depositing of overlying aluminum interconnect layers having texturing sufficient to provide a Rocking Curve FWHM angle &thgr; of about 1° or less. The aluminum interconnect layer exhibiting a Rocking Curve FWHM angle &thgr; of about 1° or less exhibits excellent electromigration properties. In addition when the aluminum layer is subsequently pattern etched, the sidewalls of the etched aluminum pattern exhibit a surprising reduction in pitting compared with pattern etched aluminum layers exhibiting higher Rocking Curve FWHM angles.

摘要（中）：

我们已经发现了特定的润湿层或润湿/阻挡层结构，其能够沉积具有足以提供约1°或更小的摇摆曲线FWHM角度θ的<111>纹理的上覆铝互连层。表现出约1°或更小的摇摆曲线FWHM角度θ的铝互连层表现出优异的电迁移性能。此外，当铝层随后进行图案蚀刻时，与显示较高的摇摆曲线FWHM角度的图案蚀刻的铝层相比，蚀刻的铝图案的侧壁显示出令人惊讶的点蚀减少。

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