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7 条记录 (耗时 0.012 秒)

    Sputtering chamber shield promoting reliable plasma ignition
    3.
    发明授权
    Sputtering chamber shield promoting reliable plasma ignition 失效
    溅射室屏蔽促进可靠的等离子体点火

    公开(公告)号：US6149784A

    公开(公告)日：2000-11-21

    申请号：US425583

    申请日：1999-10-22

    申请人： Jingang Su ,  Nelson A. Yee ,  John C. Forster ,  Kenny King-Tai Ngan ,  Lisa L. Yang

    发明人： Jingang Su ,  Nelson A. Yee ,  John C. Forster ,  Kenny King-Tai Ngan ,  Lisa L. Yang

    IPC分类号： H01L21/205 ,  C23C14/34 ,  C23C14/35 ,  C23C14/56 ,  H01J37/34 ,  H01L21/28 ,  H01L21/285

    CPC分类号： H01J37/3441 ,  C23C14/3407 ,  C23C14/35 ,  C23C14/564 ,  H01J37/3402

    摘要： A shield for a DC magnetron sputtering reactor, particularly advantageous for reliably igniting the plasma used in sputtering a ferromagnetic material such as cobalt or nickel. The grounded shield includes a slanted portion separated from the beveled periphery of the target by a small gap operating as a dark space. The shield also includes a straight cylindrical portion surrounding the main processing area. The slanted portion is joined to the cylindrical portion at a knee According to one embodiment of the invention, the knee is located greater than 9 mm from the face of the target and at a radial position at least 1 mm inward of the outer periphery of the target face.

    摘要翻译： 用于DC磁控溅射反应器的屏蔽，特别有利于可靠地点燃用于溅射铁磁材料如钴或镍的等离子体。 接地的屏蔽件包括一个与目标的斜面周边分开的倾斜部分，作为暗空间工作的小间隙。 屏蔽还包括围绕主处理区域的直圆柱形部分。 倾斜部分在膝盖处连接到圆柱形部分根据本发明的一个实施例，膝盖位于距目标的表面大于9mm处，并且位于距离靶的外周至少1mm内侧的径向位置处 目标面。

    Cleaning contact with successive fluorine and hydrogen plasmas
    4.
    发明授权
    Cleaning contact with successive fluorine and hydrogen plasmas 失效
    与连续的氟和氢等离子体清洁接触

    公开(公告)号：US06313042B1

    公开(公告)日：2001-11-06

    申请号：US09390135

    申请日：1999-09-03

    申请人： Barney M. Cohen ,  Jingang Su ,  Kenny King-Tai Ngan ,  Jr-Jyan Chen

    发明人： Barney M. Cohen ,  Jingang Su ,  Kenny King-Tai Ngan ,  Jr-Jyan Chen

    IPC分类号： H01L21302

    CPC分类号： H01L21/02063 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  Y10S438/906

    摘要： A method of cleaning a contact area of a semiconductor or metal region on a substrate of an electronic device. First, the contact area is cleaned by exposing the substrate to a plasma that includes fluorine-containing species. Second, the substrate is exposed to a second atmosphere that scavenges fluorine, preferably formed by plasma decomposition of a hydrogen-containing gas. The second atmosphere removes any fluorine residue remaining on the contact area and overcomes any need to include argon sputtering in the cleaning process. Another aspect of the invention is a method of depositing a refractory metal over a contact area of a semiconductor region on a substrate. The contact area is cleaned according to the two-step process of the preceding paragraph. Then a refractory metal is deposited over the contact area. The two-step cleaning process can reduce the electrical resistance between the refractory metal and the semiconductor region. Furthermore, if the substrate is annealed to interdiffuse atoms of the semiconductor material and the refractory metal, the two-step cleaning process can reduce the anneal temperature required to achieve a desired low electrical resistance.

    摘要翻译： 一种清洁电子设备的基板上的半导体或金属区域的接触区域的方法。 首先，通过将衬底暴露于包含含氟物质的等离子体来清洁接触区域。 其次，将基板暴露于清除氟的第二气氛，优选通过含氢气体的等离子体分解形成。 第二个气氛除去残留在接触区域上的任何氟残余物，并且克服了在清洗过程中包括氩气溅射的任何需要。 本发明的另一方面是在基板上的半导体区域的接触区域上沉积难熔金属的方法。 接触面积按前款两步法清洗。 然后在接触区域上沉积难熔金属。 两步清洁工艺可​​以降低难熔金属和半导体区域之间的电阻。 此外，如果衬底对半导体材料和难熔金属的相互扩散原子退火，则两步清洁工艺可​​以降低实现期望的低电阻所需的退火温度。

    Tailoring of a wetting/barrier layer to reduce electromigration in an aluminum interconnect
    5.
    发明授权
    Tailoring of a wetting/barrier layer to reduce electromigration in an aluminum interconnect 失效
    调整润湿/阻隔层以减少铝互连中的电迁移

    公开(公告)号：US06383915B1

    公开(公告)日：2002-05-07

    申请号：US09244280

    申请日：1999-02-03

    申请人： Jingang Su ,  Gongda Yao ,  Zhang Xu ,  Fusen Chen

    发明人： Jingang Su ,  Gongda Yao ,  Zhang Xu ,  Fusen Chen

    IPC分类号： H01L214763

    CPC分类号： H01L21/76846 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

    摘要： We have discovered particular wetting layer or wetting/barrier layer structures which enable depositing of overlying aluminum interconnect layers having texturing sufficient to provide a Rocking Curve FWHM angle &thgr; of about 1° or less. The aluminum interconnect layer exhibiting a Rocking Curve FWHM angle &thgr; of about 1° or less exhibits excellent electromigration properties. In addition when the aluminum layer is subsequently pattern etched, the sidewalls of the etched aluminum pattern exhibit a surprising reduction in pitting compared with pattern etched aluminum layers exhibiting higher Rocking Curve FWHM angles.

    摘要翻译： 我们已经发现了特定的润湿层或润湿/阻挡层结构，其能够沉积具有足以提供约1°或更小的摇摆曲线FWHM角度θ的<111>纹理的上覆铝互连层。 表现出约1°或更小的摇摆曲线FWHM角度θ的铝互连层表现出优异的电迁移性能。 此外，当铝层随后进行图案蚀刻时，与显示较高的摇摆曲线FWHM角度的图案蚀刻的铝层相比，蚀刻的铝图案的侧壁显示出令人惊讶的点蚀减少。

    Reactive plasma etch cleaning of high aspect ratio openings
    6.
    发明授权
    Reactive plasma etch cleaning of high aspect ratio openings 有权
    反应性等离子体蚀刻清洗高纵横比开口

    公开(公告)号：US6110836A

    公开(公告)日：2000-08-29

    申请号：US298065

    申请日：1999-04-22

    申请人： Barney M. Cohen ,  Jingang Su ,  Kenny King-Tai Ngan

    发明人： Barney M. Cohen ,  Jingang Su ,  Kenny King-Tai Ngan

    IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/768 ,  H01L21/00

    CPC分类号： H01L21/31116 ,  H01L21/76804 ,  H01L21/76814

    摘要： Native oxides can be removed from a substrate having high aspect ratio openings therein by using a plasma gas precursor mixture of a reactive halogen-containing gas and a carrier gas such as helium. The lightweight ions generated in the plasma react with oxygen to produce very volatile oxygen-containing species that can be readily removed through the exhaust system of the plasma chamber, preventing re-deposition of oxides on the surface of the substrate or on the sidewalls or bottom of the openings. When the substrate is mounted in a plasma chamber having dual power sources that can form a plasma above the substrate and can apply bias to the substrate, tapered openings are formed rapidly that can be readily filled without forming voids.

    摘要翻译： 可以通过使用反应性含卤素气体和诸如氦的载气的等离子体气体前体混合物，从具有高纵横比孔的基底中除去天然氧化物。 在等离子体中产生的轻质离子与氧反应产生非常易挥发的含氧物质，其可以通过等离子体室的排气系统容易地除去，从而防止氧化物在基材表面或侧壁或底部再沉积 的开口。 当基板安装在具有双电源的等离子体室中时，其可以在基板上形成等离子体并且可以向基板施加偏压，所以快速形成锥形开口，其可容易地填充而不形成空隙。