A solid-state image sensing device 10 mainly includes a light-receiving portion 14 formed on a substrate 12, a vertical shift register 16 formed to face one side of the light-receiving portion 14, and a horizontal shift register 18 and charge amplifiers 20 formed to face the opposite side of the light-receiving portion 14. The light-receiving portion 14 is formed from M×N photodiodes 22, and each photodiode 22 has a gate switch 24. The control terminals of the gate switches 24 are connected to the vertical shift register 16 via gate lines 26 in units of rows. The gate lines 26 have compensation lines 26c so as to make almost equal the capacitances of the gate lines 26 connected in units of rows. Accordingly, a plurality of solid-state image sensing devices 10 can be easily arrayed without any dead zone and can increase the light-receiving area.