Invention Grant
- Patent Title: Defect inspection method and apparatus for silicon wafer
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Application No.: US09842929Application Date: 2001-04-27
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Publication No.: US06384909B2Publication Date: 2002-05-07
- Inventor: Koji Tomita , Muneo Maeshima , Shigeru Matsui , Yoshitaka Kodama , Hitoshi Komuro , Kazuo Takeda
- Applicant: Koji Tomita , Muneo Maeshima , Shigeru Matsui , Yoshitaka Kodama , Hitoshi Komuro , Kazuo Takeda
- Main IPC: G01N2188
- IPC: G01N2188

Abstract:
A defect inspection apparatus for detecting defects existing on a surface of a semiconductor sample and/or inside the sample based on light information from the sample obtained by irradiating a light beam onto the sample is provided, which comprises a detecting means for detecting positions in the depth direction where the defects exist and distribution of the defects based on the light information; a setting means for setting a position in the depth direction where defects exist; and a means for displaying the distribution of the defects obtained by the detecting means, the displaying means displaying the distribution of the defects corresponding to the position in the depth direction set by the setting means.
Public/Granted literature
- US20010015802A1 Defect inspection method and apparatus for silicon wafer Public/Granted day:2001-08-23
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