- 专利标题： Fabrication process of solar cell
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申请号： US08932708申请日： 1997-09-18
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公开(公告)号： US06387780B1公开(公告)日： 2002-05-14
- 发明人: Shoji Nishida
- 申请人： Shoji Nishida
- 优先权： JP8-248217 19960919
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
Metal-grade silicon is melted and solidified in a mold to form a plate-shaped silicon layer and a crystalline silicon layer is made thereon, thereby providing a cheap solar cell without a need for a slicing step.
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