发明授权
- 专利标题： Semiconductor substrate manufacturing method, semiconductor pressure sensor and manufacturing method thereof
- 专利标题（中）： 半导体衬底制造方法，半导体压力传感器及其制造方法
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申请号： US09095131申请日： 1998-06-10
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公开(公告)号： US06388279B1公开(公告)日： 2002-05-14
- 发明人: Minekazu Sakai , Toshimasa Yamamoto , Yasutoshi Suzuki , Kenichi Yokoyama , Masakazu Terada , Eishi Kawasaki , Inao Toyoda
- 申请人： Minekazu Sakai , Toshimasa Yamamoto , Yasutoshi Suzuki , Kenichi Yokoyama , Masakazu Terada , Eishi Kawasaki , Inao Toyoda
- 优先权： JPH.9-153746 19970611; JPH.9-321022 19971121; JPH.10-119089 19980428
- 主分类号： H01L2720
- IPC分类号： H01L2720
摘要：
In the method for manufacturing a semiconductor substrate, a concavity and a connecting hole for connecting the concavity to the outside are formed on a lower face side of a first substrate, and the first substrate is laminated with a second substrate in an atmosphere at atmospheric pressure. A diaphragm is formed by thinning the first substrate from its upper face by polishing. A sealing hole reaching to the connecting hole is formed from the upper face of the first substrate. An oxide film is formed in the sealing hole in a vacuum, whereby the connecting hole is sealed while the pressure of the pressure reference chamber is reduced to a vacuum. In this way, since the pressure reference chamber is pressure-reduced in a final stage, the diaphragm can be prevented from deforming due to pressure difference during polishing.