发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US09663717申请日： 2000-09-18
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公开(公告)号： US06388295B1公开(公告)日： 2002-05-14
- 发明人: Tomohiro Yamashita , Yoshinori Okumura , Atsushi Hachisuka , Shinya Soeda
- 申请人： Tomohiro Yamashita , Yoshinori Okumura , Atsushi Hachisuka , Shinya Soeda
- 优先权： JP2000-103083 20000405
- 主分类号： H01L2976
- IPC分类号： H01L2976
摘要：
The semiconductor device has a triple well structure. The triple well and other wells have impurity concentration distributions in the depth direction, which are determined in accordance with required function. Thereby, the required performances such as suppression of a leak current can be achieved even in a miniaturized structure.
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