发明授权
US06388327B1 Capping layer for improved silicide formation in narrow semiconductor structures
失效
用于改善窄半导体结构中硅化物形成的封盖层
- 专利标题: Capping layer for improved silicide formation in narrow semiconductor structures
- 专利标题(中): 用于改善窄半导体结构中硅化物形成的封盖层
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申请号: US09756938申请日: 2001-01-09
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公开(公告)号: US06388327B1公开(公告)日: 2002-05-14
- 发明人: Kenneth J. Giewont , Stephen Bruce Brodsky , Cyril Cabral, Jr. , Anthony G. Domenicucci , Craig Mitchell Ransom , Yun-Yu Wang , Horatio S. Wildman , Kwong Hon Wong
- 申请人: Kenneth J. Giewont , Stephen Bruce Brodsky , Cyril Cabral, Jr. , Anthony G. Domenicucci , Craig Mitchell Ransom , Yun-Yu Wang , Horatio S. Wildman , Kwong Hon Wong
- 主分类号: H01L2348
- IPC分类号: H01L2348
摘要:
A capping layer for a semiconductor structure is described. The capping layer is deposited over a silicide-forming metal and has a composition such that nitrogen diffusion therefrom is insufficient to cause formation of an oxynitride from an oxide layer on the underlying silicon. The capping layer may be a metal layer from which no N diffusion occurs, or one or more layers including Ti and/or TiN arranged so that N atoms do not reach the oxide layer. A method is also described for forming the Ti and TiN layers. It is advantageous to deposit non-stoichiometric TiN deficient in N, by sputtering from a Ti target in a nitrogen flow insufficient to cause formation of a nitride on the target.