Invention Grant
US06391797B1 Method of manufacturing semiconductor device by sputtering dielectric forming materials while selectively heating growing layer
失效
通过溅射电介质形成材料制造半导体器件的方法，同时选择性地加热生长层
- Patent Title: Method of manufacturing semiconductor device by sputtering dielectric forming materials while selectively heating growing layer
- Patent Title (中): 通过溅射电介质形成材料制造半导体器件的方法，同时选择性地加热生长层
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Application No.: US08923246Application Date: 1997-09-04
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Publication No.: US06391797B1Publication Date: 2002-05-21
- Inventor: Shinobu Takehiro , Satoshi Yamauchi , Masaki Yoshimaru
- Applicant: Shinobu Takehiro , Satoshi Yamauchi , Masaki Yoshimaru
- Priority: JP8-253801 19960904
- Main IPC: H01L2120
- IPC: H01L2120
Abstract:
A method of manufacturing a semiconductor device, comprises the following steps of growing a dielectric film made of a dielectric material whose dielectric constant is improved by crystallization thereof, on a semiconductor substrate to utilize the dielectric film as a capacitor film, and applying a voltage to the semiconductor substrate in a plasma atmosphere to increase a grown interface temperature by “dielectric heating” upon growth of the dielectric film
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