发明授权
US06399473B1 Method of producing a II-VI semiconductor component containing selenium and/or sulrfur
失效
制备含有硒和/或磺胺的II-VI半导体组分的方法
- 专利标题： Method of producing a II-VI semiconductor component containing selenium and/or sulrfur
- 专利标题（中）： 制备含有硒和/或磺胺的II-VI半导体组分的方法
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申请号： US09480758申请日： 2000-01-10
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公开(公告)号： US06399473B1公开(公告)日： 2002-06-04
- 发明人: Frank Fischer , Matthias Keller , Thomas Litz , Gottfried Landwehr , Hans-Jürgen Lugauer , Andreas Waag , Markus Keim
- 申请人： Frank Fischer , Matthias Keller , Thomas Litz , Gottfried Landwehr , Hans-Jürgen Lugauer , Andreas Waag , Markus Keim
- 优先权： DE19729186 19970708
- 主分类号： H01L2128
- IPC分类号： H01L2128
摘要：
A II-VI semiconductor component is produced with an active layer sequence having at least one II-VI semiconductor layer containing Se and/or S on a substrate. First, an Se-free II-VI interlayer based on BeTe is grown epitaxially on the substrate in an essentially Se-free and S-free first epitaxy chamber. The active layer sequence is then grown epitaxially on the Se-free II-VI semiconductor layer.
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