A dummy bit line is formed from the same layer as and separately from a bit line, and is running in parallel with the bit line. Capacitor is formed on the layer upper than bit line and has a cell plate. An intermediate interconnection is formed on the layer upper than capacitor and is electrically connected to cell plate and dummy bit line. Thus, a semiconductor memory device is obtained in which a cell plate voltage can reliably be fed to a cell plate while preventing the increase of the area of a chip.